Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian

doi:10.1103/physrevb.97.104412

Cited by 2 publications

(2 citation statements)

References 34 publications

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“…In addition, the shot noise in the tunnel junction is not only modulated by the intensity of Rashba coupling and the added external electric field but also depends on the quantum size [23][24][25]. Wu et al also confirmed these results when they studied the tunneling of spin electrons through the dilute magnetic semiconductor/semiconductor junction [26], while Niu et al pointed out that temperature has a great influence on shot noise [27].…”

Section: Introductionmentioning

confidence: 91%

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Lü,

Fang,

Xie

et al. 2024

Phys. Scr.

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Based on the free electronic model and Büttike’s theory on shot noise, we investigated the shot noise of spin electrons in ferromagnetic/non-ferromagnetic insulator/spin filter layer/normal metal (FM/I/SF/NM) quasi-one-dimensional single spin filter tunneling junctions. The calculation results show that the barrier heights and thicknesses of the insulator and spin filter layers strongly affect the values and phases of the Fano factors of spin electrons. Compared with the traditional sandwich structures of ferromagnetic/spin filter layer/normal metal (FM/SF/NM) and ferromagnetic/non-ferromagnetic insulator/normal metal (FM/I/NM), when the thicknesses of the insulator and spin filter layers are very small, in single spin filter magnetic heterojunctions (FM/I/SF/NM), the insulator layer can suppress the Fano factors, while the spin filter layer is easier to separate the Fano factors of electrons whose spin directions are different. Further analysis shows that whether the Rashba coupling in the spin filter layer has an obvious influence on the Fano factors of spin electrons depends on the thickness of the spin filter layer. On the other hand, the Fano factors are strongly dependent on the sizes and directions of the molecular fields of the ferromagnet and spin filter layers. In addition, the electrons are incident with low energy or high energy, and the barrier heights and thicknesses of the spin filter layer and the thicknesses of the insulation layer have a significant effect on the spin-direction-dependent Fano factors of electrons.

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Section: Introductionmentioning

confidence: 91%

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Lü,

Fang,

Xie

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Based on the dilute magnetic semiconductors/semiconductor junctions and the junctions with step barrier, the results in references [28,29] confirmed that shot noise has a strong dependence on the quantum size effect and the applied electric field. In addition, Niu et al reported that the shot noise in a double-barrier magnetic tunnel junction has a strong dependence on temperature [30].…”

Section: Introductionmentioning

confidence: 99%

Shot noise of spin-polarized electrons in a single-channel magnetic tunnel junctions

Lv¹,

Fang²,

Xie

et al. 2021

J. Phys.: Condens. Matter

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Based on the free electron approximation and Egues’ shot noise theory, the shot noise of spin-polarized electrons tunneling in ferromagnetic/semiconductor/ferromagnetic tunnel junctions is studied. Considering the matching of conduction band between ferromagnetic and semiconductor layers, our results show that the Fano factors of spin-polarized electrons have resonant tunneling characteristics when the semiconductor thickness and Rashba spin–orbit coupling strength are increased. When the magnetic moments in two ferromagnetic layers are parallel, with the increase of the molecular field in the ferromagnets, the Fano factor for spin-up electron decreases to zero and then increases exponentially and the Fano factor for spin-down electron is always linear. But when the magnetic moments are antiparallel, the Fano factors for different spin directions tend to be the same. In addition, the Fano factors for different spin directions are almost zero when the incident electron energy is located in the low energy region, but exhibit irregular oscillation when the incident electron energy is located in the high energy region. At the same time, with the variations of the angle of the magnetic moments in two ferromagnetic layers, the electrons Fano factors for different spin orientations show obvious separation characteristics. On the other hand, the conduction band mismatch between ferromagnetic and semiconductor layers is considered, the Fano factors of electrons with different spin directions show obvious difference compared with the results of conduction band matching.

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Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Cited by 2 publications

References 34 publications

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Shot noise of spin-polarized electrons in a single-channel magnetic tunnel junctions

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