Shot noise behaviour of subthreshold MOS transistors

Abstract

It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented

Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices

“…Pulses therefore occur at the modulation frequency and not at its submultiple as in a previous experiment. 3 Display on a sampling oscilloscope confirms this.…”

Wide bandwidth transimpedance amplifier for extremely high sensitivity continuous measurements

“…The device that synthesizes the resistance R dc deserves careful attention for what concerns its generated noise ͑in particular, for the shot noise component 16,17 ͒ and its parasitic capacitances to minimize the noise generated by the amplifier, as will be discussed in the Sec. By doing this, no limitation will be encountered in integrating it in a standard complementary metal-oxide-semiconductor ͑CMOS͒ technology.…”

Nonlinear analysis of noise in static and dynamic translinear circuits

“…In the saturation region, the most prevalent region for TL circuits, and simplifies to [39]. In addition to this white shot noise, the MOS transistor also exhibits noise.…”

“…In addition to this white shot noise, the MOS transistor also exhibits noise. However, it can be shown that noise is negligible at low current levels [39], the region used in MOS-TL circuits.…”

“…10. Thus, and are described by (39) Another possibility is the harmonic mean. This function has the advantage that and always remain larger than .…”