Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures

Ditizio, R. A.; Liu, G.; Fonash, Stephen J.; Hseih, B.‐C.; Greve, David W.

doi:10.1063/1.102543

Cited by 77 publications

(21 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In surface engineering H 2 -containing plasmas have a wide range of applications, for example in etching 1 , film deposition 2-7 and surface passivation, hydrogenation and oxide reduction [8][9][10][11] . Furthermore, H 2 -Ar mixtures were successfully applied for hydrogenation of thin film transistors 12 and to control the surface properties of polymers 13 .…”

Section: Introductionmentioning

confidence: 99%

Ion chemistry in H2-Ar low temperature plasmas

Sode

Schwarz-Selinger

Jacob

2013

Journal of Applied Physics

View full text Add to dashboard Cite

A rate equation model is devised to study the ion composition of inductively coupled H 2 -Ar plasmas with different H 2 -Ar mixing ratios. The model is applied to calculate the ion densities n i , the wall loss probability of atomic hydrogen β H , and the electron temperature T e . The calculated n i 's of Ar + , H + , H + 2 , H + 3 and ArH + are compared with experimental results. Calculations were made for a total gas pressure of 1.0 Pa. The production and loss channels of all ions are presented and discussed in detail. With the production and loss rates the density dependence of each ion on the plasma parameters are explained. It is shown that the primary ions H + 2 and Ar + which are produced by ionization of the background gas by electron collisions are effectively converted into H + 3 and ArH + . The high density of ArH + and Ar + is attributed to the low loss to the walls compared to hydrogen ions. It is shown that the H + /H + 2 density ratio is strongly correlated to the H/H 2 density ratio. The dissociation degree is around 1.7 %. From matching the calculated to the measured atomic hydrogen density n H the wall loss probability of atomic hydrogen on stainless steel β H was determined to be β H = 0.24. The model results were compared with recently published experimental results. The calculated and experimentally obtained data are in fair agreement.

show abstract

Section: Introductionmentioning

confidence: 99%

Ion chemistry in H2-Ar low temperature plasmas

Sode

Schwarz-Selinger

Jacob

2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…H 2 -containing plasmas have a wide range of technical applications in etching 1 , film deposition 2-7 and surface passivation, hydrogenation and oxide reduction [8][9][10][11] . H 2 -Ar mixtures were successfully applied for hydrogenation of thin film transistors 12 and to control the surface properties of polymers 13 .…”

Section: Introductionmentioning

confidence: 99%

Quantitative determination of mass-resolved ion densities in H2-Ar inductively coupled radio frequency plasmas

Sode

Schwarz-Selinger

Jacob

2013

Journal of Applied Physics

View full text Add to dashboard Cite

Inductively coupled H 2 -Ar plasmas are characterized by an energy-dispersive mass spectrometer (plasma monitor), a retarding field analyzer, optical emission spectroscopy and a Langmuir probe. A procedure is presented that allows determining quantitatively the absolute ion densities of Ar + , H + , H + 2 , H + 3 and ArH + from the plasma monitor raw signals. The calibration procedure considers the energy and mass-dependent transmission of the plasma monitor. It is shown that an additional diagnostic like a Langmuir probe or a retarding field analyzer is necessary to derive absolute fluxes with the plasma monitor. The conversion from fluxes into densities is based on a sheath and density profile model.Measurements were conducted for a total gas pressure of 1.0 Pa. For pure H 2 plasmas the dominant ion is H + 3 . For mixed H 2 -Ar plasmas the ArH + molecular ion is the most dominant ion species in a wide parameter range. The electron density n e is around 3 × 10 16 m −3 and the electron temperature T e decreases from 5 to 3 eV with increasing Ar content. The dissociation degree was measured by actinometry. It is around 1.7 % nearly independent on Ar content. The gas temperature, estimated by the rotational distribution of the Q-branch lines of the H 2 Fulcher-α diagonal band (v' = v" = 2) is estimated to (540±50) K.

show abstract

“…Thus, most of the methods proposed in the literature for the preparation of silicon oxide have involved either processing temperatures above 400°C or the use of silane during deposition and a new method without these limitations is required to prepare high quality and reliable devices at a low temperature. Now, it has been shown that RF plasma hydrogenation of evaporated amorphous Si films can lead to the formation of nano-crystalline layers suitable for thin film transistor fabrication and optical applications [4,5]. In addition, the use of plasma hydrogenation for the formation of nano-porous silicon from nano-crystalline silicon at maximum processing temperatures below 400°C has been recently reported [6,7].…”

Section: Introductionmentioning

confidence: 98%