Ion chemistry in H2-Ar low temperature plasmas

Sode, M.; Schwarz-Selinger, T.; Jacob, W.

doi:10.1063/1.4817526

Cited by 44 publications

(69 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the main result of Refs. 22,23 , namely the ion species distribution, is in reasonable agreement with recent publications of Fox-Lyon et al 24 and Jimenez-Redondo et al 25 studying H 2 -Ar plasmas at comparable pressures. The H 2 -Ar plasma can be considered as a model system with a much lower complex plasma chemistry than a H 2 -N 2 -Ar plasma.…”

Section: Introductionsupporting

confidence: 81%

“…23 for a gas temperature of 300 K. The gas temperature in the here investigated plasma is 460 K (see Sec. II C).…”

Section: B Electron and Ion-molecule Collisionsmentioning

confidence: 99%

“…The model is described in detail in Ref. 23 where it was applied to H 2 -Ar plasmas. The model takes into account densities of electrons, positive ions, radicals, and the stable background gas species.…”

Section: Modelmentioning

confidence: 99%

“…Densities n j of background gas species, wall loss times t wrad and densities n rad of radicals, the gas temperature T g , the electron temperature T e , the electron density n e , and ion densities n i will be presented. The same measurement methods and rate equation model as in a preceding study of a H 2 -Ar plasma 22,23 are applied here. The determined ion densities will be discussed and compared with the model results.…”

Section: Introductionmentioning

confidence: 99%

“…The densities of the gas species, the radical species H, the electrons and the ion species as well as the temperature of the gas were determined experimentally 22 . Furthermore, by a rate equation model the ion densities, the atomic hydrogen density and the electron temperature were studied theoretically 23 . One of the main result of Refs.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Measurement and modeling of neutral, radical, and ion densities in H2-N2-Ar plasmas

Sode

Jacob

Schwarz-Selinger

et al. 2015

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

A comprehensive experimental investigation of absolute ion and neutral species densities in an inductively coupled H 2 -N 2 -Ar plasma was carried out. Additionally, the radical and ion densities were calculated using a zero-dimensional rate equation model. The H 2 -N 2 -Ar plasma was studied at a pressure of 1.5 Pa and an rf power of 200 W. The N 2 partial pressure fraction was varied between f N 2 = 0 % and 56 % by a simultaneous reduction of the H 2 partial pressure fraction. The Ar partial pressure fraction was held constant at about 1 %. NH 3 was found to be produced almost exclusively on the surfaces of the chamber wall. NH 3 contributes up to 12 % to the background gas.To calculate the radical densities with the rate equation model it is necessary to know the corresponding wall loss times t wrad of the radicals. t wrad was determined by the temporal decay of radical densities in the afterglow with ionization threshold mass spectrometry during pulsed operation and based on these experimental data the absolute densities of the radical species were calculated and compared to measurement results.Ion densities were determined using a plasma monitor (mass and energy resolved mass spectrometer). H + 3 is the dominant ion in the range of 0.0 ≤ f N 2 < 3.4 %. For 3.4 < f N 2 < 40 % NH + 3 and NH + 4 are the most abundant ions and agree with each other within the experimental uncertainty. For f N 2 = 56 % N 2 H + is the dominant ion while NH + 3 and NH + 4 have only a slightly lower density. Ion species with densities in the range between 0.5 and 10 % of n i,tot are H + 2 , ArH + , and NH + 2 . Ion species with densities less than 0.5 % of n i,tot are H + , Ar + , N + , and NH + . Our model describes the measured ion densities of the H 2 -N 2 -Ar plasma reasonably well. The ion chemistry, i.e., the production and loss processes of the ions and radicals, are discussed in detail. The main features, i.e., the qualitative abundance of the ion species and the ion density dependence on the N 2 partial pressure fraction, are well reproduced by the model.

show abstract

Section: Introductionsupporting

confidence: 81%

“…23 for a gas temperature of 300 K. The gas temperature in the here investigated plasma is 460 K (see Sec. II C).…”

Section: B Electron and Ion-molecule Collisionsmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Measurement and modeling of neutral, radical, and ion densities in H2-N2-Ar plasmas

Sode

Jacob

Schwarz-Selinger

et al. 2015

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Tian,

Ding,

Chai

et al. 2023

Adv Materials Technologies

View full text Add to dashboard Cite

As integrated circuits continue to shrink in size, the demand for high‐quality adhesive layers in copper Damascene interconnects has increased. However, tantalum (Ta) films, used as liners, prepared by atomic layer deposition (ALD) from metal halide precursors, are prone to corrosion and exhibit issues such as low film density and unstable performance. In this study, Ta films are successfully fabricated using a plasma‐enhanced ALD (PEALD) process with an organometallic precursor of Ta(NtBu)(NEt2)3 (TBTDET). The study of the growth conditions reveals that introducing 10% Ar in Ar‐H2 mixed gas leads to continuous high‐quality Ta films. The deposited Ta films are free of halogen impurities, which can avoid the detrimental impact on the stability of the Cu interconnects. Although the films contain some carbon and nitrogen impurities, they do not affect the film adhesive properties. Transmission electron microscopy shows that the Ta films are amorphous, and the amorphous Ta films exhibit superior barrier properties. Moreover, highly uniform Ta films can be conformally deposited into narrow interconnect structures using this PEALD process. These findings suggest that the Ta films prepared by the organometallic precursor can offer a promising solution to address the issues related to the halogen elements in the adhesive layer preparation.

show abstract

Investigations on the effect of process parameters on the growth of vertically oriented graphene sheet in plasma‐enhanced chemical vapour deposition system

Gupta

Sharma

2021

Contributions to Plasma Physics

View full text Add to dashboard Cite

A multistage numerical model comprising the plasma kinetics and surface deposition sub-models is developed to study the influence of process parameters, namely, total gas pressure and input plasma power on the plasma chemistry and growth characteristics of vertically oriented graphene sheets (VOGS) grown in the plasma-enhanced chemical vapour deposition system containing the Ar + H 2 + C 2 H 2 reactive gas mixture. The spectral and spatial distributions of temperature and number densities, respectively, of plasma species, that is, charged and neutral species in the plasma reactor, are examined using inductively coupled plasma module of COMSOL Multiphysics 5.2 modelling suite.The numerical data from the computational plasma model are fed as the input parameters for the surface deposition model, and from the simulation results, it is found that there is a significant drop in the densities of various plasma species as one goes from the bulk plasma region to the substrate surface. The significant loss of the energetic electrons is observed in the plasma region at high pressure (for constant input power) and low input power (for constant gas pressure). At low pressure, the carbon species generate at higher rates on the catalyst nanoislands surface, thus enhancing the growth and surface density of VOGS. However, it is found that VOGS growth rate increases when input plasma power is raised from 100 to 300 W and decreases with further increase in the plasma power. A good comparison of the model outcomes with the available experimental results confirms the adequacy of the present model.

show abstract

Ion chemistry in H2-Ar low temperature plasmas

Cited by 44 publications

References 41 publications

Measurement and modeling of neutral, radical, and ion densities in H2-N2-Ar plasmas

Measurement and modeling of neutral, radical, and ion densities in H2-N2-Ar plasmas

Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Investigations on the effect of process parameters on the growth of vertically oriented graphene sheet in plasma‐enhanced chemical vapour deposition system

Contact Info

Product

Resources

About