Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride

Gritsenko, V. A.; Kwok, R. W. M.; Wong, Hei; Xu, Jianbin

doi:10.1016/s0022-3093(01)00910-3

Cited by 68 publications

(62 citation statements)

References 19 publications

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“…The chemical bonding in amorphous non-stoichiometric SiO x N y can be described by two bonding models, the random mixture model (RMM) and the random bonding model (RBM). [23,24] In RMM, separate phases of SiO 2 and Si 3 N 4 are randomly distributed in the material, whereas in RBM the central Si atom is randomly bond to four Si, O, and/or N atoms. [23,24] Commonly, the growth of SiO x N y is more closely governed by RBM than by RMM, especially for sputter-deposited films, as the growth conditions are usually thermodynamically far from those required for the growth of separate SiO 2 and Si 3 N 4 phases.…”

Section: Materials Properties Of Silicon Oxynitridementioning

confidence: 99%

“…[23,24] In RMM, separate phases of SiO 2 and Si 3 N 4 are randomly distributed in the material, whereas in RBM the central Si atom is randomly bond to four Si, O, and/or N atoms. [23,24] Commonly, the growth of SiO x N y is more closely governed by RBM than by RMM, especially for sputter-deposited films, as the growth conditions are usually thermodynamically far from those required for the growth of separate SiO 2 and Si 3 N 4 phases. [9,25] The material properties in the randomly bond SiO x N y mostly depend on the ratio of O and N in the Si-matrix.…”

Section: Materials Properties Of Silicon Oxynitridementioning

confidence: 99%

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Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Section: Materials Properties Of Silicon Oxynitridementioning

confidence: 99%

Section: Materials Properties Of Silicon Oxynitridementioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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“…[9][10][11][12][13][14][15] Among them, Si 3 N 4 is considered one of the most interesting resistive-switching materials thanks to its abundant defects, which play an important role in resistive switching. [16][17][18][19][20][21][22][23][24] Furthermore, Si 3 N 4 -based RRAM has numerous merits of fast switching speed, low switching current, strong endurance, good retention, full compatibility to conventional Si CMOS processing, and capability of both unipolar and bipolar switching modes. [16][17][18][19][20][21][22] For realization of the high-density crossbar array configuration, sneak current which leads to read-out errors should be suppressed.…”

mentioning

confidence: 99%

“…Si pathways can be formed and broken by controlling the applied electric field across the Si 3 N 4 layer for low-resistance state (LRS) and high-resistance state (HRS), respectively. [16][17][18][19][20][21][22][23][24] For unipolar resistive switching, the bias is swept keeping the same polarity in the negative region. The electroforming step (the first set process) is required with compliance current (I COMP ) to switch the RRAM cell from the initial state to the LRS.…”

mentioning

confidence: 99%

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

2016

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In this letter, we report unique unipolar resistive switching memory behaviors in the Ni/Si3N4/p-Si structure by controlling the impurity concentration of Si bottom electrode. It is found that we can decrease the reset current drastically by reducing dopant concentration by reducing dopant concentration, which helps low-power operation in the high density resistive switching memory array. Also, the samples with high impurity concentration exhibited ohmic conduction in the low-resistance state (LRS) while those with low dopant concentration below 1018 cm−3 showed a remarkable self-rectifying behavior. The nonlinear metal-insulator-semiconductor (MIS) diode characteristics in the samples with low doping concentration (∼1018 cm−3) are explained by the formation of Schottky barrier at the metal and semiconductor interface. As a result, we demonstrate high rectification ratio (>105) between forward and reverse currents along with the robust nonvolatile properties including endurance cycles and retention from the devices with large self-rectification ratio. The high self-rectifying characteristics of Si3N4-based RRAM cell would be one of the most virtuous merits in the high-density crossbar array.

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“…The chemical bonding in amorphous nonstoichiometric SiO x N y can be described by two bonding models, the random mixture model (RMM) and the random bonding model (RBM). [40,41] In RMM, separate phases of SiO 2 and Si 3 N 4 are randomly distributed in the material, whereas in RBM the central Si atom is randomly bond to four Si, O, and/or N atoms. [40,41] Commonly, the growth of SiO x N y is more closely governed by RBM than by RMM, especially for sputter-deposited films, as the growth conditions are usually thermodynamically far from those required for the growth of separate SiO 2 and Si 3 N 4 phases.…”

Section: Silicon Oxynitridementioning

confidence: 99%

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

Hänninen¹

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Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N 2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C 2 H 2 ) in addition to N 2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N 2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated.The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N 2 /Ar flow ratios of 0.3 and above. These films showed Si−N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si−Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature iii iv below 200 ℃, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V.The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was show...

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Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride

Cited by 68 publications

References 19 publications

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

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