Short-range order and luminescence in amorphous silicon oxynitride

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…In RB model, silicon, oxygen and nitrogen atoms are bonded in the form of any of the five tetrahedrons of SiO b N 4-b (where b = 0, 1, 2, 3 and 4). Since the chemical shift of Si 2p level for each of the five tetrahedrons is proportional to the partial charge on the Si atom [115], the resultant Si 2p feature appears as a single broaden peak at a position in the range of 100-103 eV depending on the composition. In the RM model, an XPS Si 2p spectrum should have only two components, corresponding to the a-SiO 2 and a-Si 3 N 4 phases.…”

“…Two models were proposed for describing the composition and structure of oxynitride film: random bonding (RB) model and random mixing (RM) model [77,115]. In RB model, silicon, oxygen and nitrogen atoms are bonded in the form of any of the five tetrahedrons of SiO b N 4-b (where b = 0, 1, 2, 3 and 4).…”

Electronic structure of silicon oxynitride: Ab-initio and experimental study, comparison with silicon nitride

“…Amorphous oxinitride a-SiO x N y consists of Si-O and Si-N bonds which create five sorts of tetrahedron SiO N 4-, ¼ 0,1,2,3,4. 14, 15 The experimental study of electronic structure of amorphous Si 2 N 2 O by means of x-ray emission spectroscopy was conducted in Ref. 13.…”

Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

“…The position and half width for Si 3+ , Si 2+ , and Si + peaks (SiSiO 3 , SiSi 2 O 2 , and SiSi 3 O tetrahedra) were determined using linear interpolation of E 0 , E 4 , σ 0 , and σ 4 using the number of oxygen atoms as a parameter [9,10]. Dashed curves in Fig.…”

“…The random bonding (RB) and random mixture (RM) models [5][6][7][8][9][10] are two extreme cases of the SiO x structure description. The RB model assumes that SiO x consists of five types of SiO v Si 4 -v tetrahe dra, where v = 0, 1, 2, 3, 4.…”