Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver

Bisi, Davide; Nguyen, Long H.; Zuk, Philip; Gokhale, Ashish; Coffey, Keith; Liu, Ted; Cruse, Bill; Hosoda, Toru; Kamiyama, Masamichi; Parikh, P.; Mishra, Umesh K.

doi:10.1109/apec43599.2022.9773446

Cited by 3 publications

(1 citation statement)

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“…Finally, besides circuit approaches, device level innovations have been reported to improve the tSC of GaN devices. A straightforward approach is to reduce the saturation current (and the associated electric field crowding under the SC condition) by removing segments of the 2DEG channel along the width of GaN HEMT [146], [164]. This approach enables a tSC over 3 µs in industrial Cascode GaN HEMTs.…”

Section: A Short Circuit Robustnessmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: A Short Circuit Robustnessmentioning

confidence: 99%