Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Llinas, Juan Pablo; Fairbrother, Andrew; Barin, Gabriela Borin; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Choi, Byung Yong; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Won-Woo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Kläus; Fischer, Felix R.; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael F.; Fasel, Román; Bokor, Jeffrey

doi:10.1038/s41467-017-00734-x

Cited by 334 publications

(373 citation statements)

References 36 publications

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“…Recent breakthroughs in bottom-up chemical synthesis can produce GNRs with atomistically pristine edge states and overcome this shortcoming 19 . In fact, a recent experimental work demonstrated working transistors with 9-and 13-AGNRs made with these techniques 22 . The methods used to synthesize these ribbons can also be used to generate complex periodic structures beyond simply armchair and zigzag nanoribbons 23,24 .…”

mentioning

confidence: 99%

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

Smith

Llinas

Bokor

et al. 2018

IEEE Electron Device Lett.

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Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steepslope switching with 6 mV/decade subtheshold swing over five orders of magnitude and ON-currents of 88 µA µm −1 . This is enabled by the superlattice-like structure of these ribbons that have large periodic unit cells with regions of different effective bandgap, resulting in minibands and gaps in the density of states above the conduction band edge. The CGNR ribbon used in our proposed device has been previously fabricated with bottom-up chemical synthesis techniques and could be incorporated into an experimentally-realizable structure.In 1970, L.Esaki and R. Tsu predicted 1 that in an appropriately made superlattice, it should be possible to obtain very narrow width bands, which could then lead to negative differential resistance. The remarkable property of these superlattices is in the fact that, unlike the Esaki diodes, this negative differential resistance does not need any tunneling, rather it comes from the direct conduction of electrons. Nonetheless, significant difficulty in synthesizing atomically precise, eptiaxial heterostructures has made it very challenging to realize such superlattice structures 2-8 . Much work has been done on modeling graphene nanoribbon heterostructures and superlattices which could exhibit NDR 9-15 . Other work has been done on steep slope devices based on GNR and CNT heterojunctions 16,17 . Gnani et al. showed how superlattices could be used in a III-V nanowire FET to achieve steep slope behavior by using the superlattice gap to filter high energy electrons in the OFF state 18 . Here, we show that the recently synthesized chevron nanoribbons 19 provides a natural, monolithic material system where narrow-width energy bands and negative differential resistance (NDR) can be achieved. Our atomistic calculations predict that the NDR behavior should manifest at room temperature along with sub-thermal steepness (<60 mV/decade at room temperature). Such NDR behavior could lead to completely novel devices for next generation electronics.Unlike a graphene sheet, a narrow strip etched out of graphene, often called a graphene nanoribbon (GNR), can provide a sizeable bandgap. As a result, GNRs could lead to devices with good ON/OFF ratio at the nanoscale. However, a number of studies have also shown the deleterious effect of edge roughness on the device performance 20,21 . Recent breakthroughs in bottom-up chemical synthesis can produce GNRs with atomistically pristine edge states and overcome this shortcoming 19 . In fact, a recent experimental work demonstrated working transistors with 9-and 13-AGNRs made with these techniques 22 . The methods used to synthesize these ribbons can also be used to generate complex periodic structures beyond simply armchair and zigzag nanoribbon...

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mentioning

confidence: 99%

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

Smith

Llinas

Bokor

et al. 2018

IEEE Electron Device Lett.

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“…At lower temperature and smaller ribbon width, the I max /I min is expected to increase. For example, for a very small ribbon width of only 9 to 13 atoms width, the I max /I min is around ∼1000 (V g � 0-20 V dc ) [48].…”

Section: Resultsmentioning

confidence: 99%

PMMA-Assisted Plasma Patterning of Graphene

Bobadilla

Ocola

Sumant

et al. 2018

Journal of Nanotechnology

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Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. e present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate-(PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. e exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices.

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“…Standard Si/SiO 2 (highly p‐doped, 0.001 Ω*cm) with a thermally grown SiO 2 (285 nm) was used as the substrate. Metal pads were defined using electron‐beam lithography in PMMA 50K/950K followed by a metallization step (5 nm Ti/40 nm Pt) 5. Chemical vapor deposition‐grown graphene (Graphenea) was transferred on top and patterned into 400 nm wide stripes using reactive ion etching (Ar/O 2 ) after another step of e‐beam lithography.…”

Section: Methodsmentioning

confidence: 99%

“…The last decade has brought significant advances in the bottom–up fabrication of atomically precise graphene nanomaterials1 and structures of increasing complexity 2–4. While graphene nanoribbons (GNRs) with zigzag edges (ZGNRs) so far have not been integrated into devices due to their reactivity, major progress in the processing of GNRs with armchair edges (AGNRs) has been achieved, and field effect transistors (FETs) that exploit their sizable electronic bandgaps have recently been reported 5,6. However, the large bandgaps of the currently available AGNRs severely limit device performances due to significant Schottky barriers at the contacts.…”

Section: Figurementioning

confidence: 99%

Massive Dirac Fermion Behavior in a Low Bandgap Graphene Nanoribbon Near a Topological Phase Boundary

et al. 2020

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Graphene nanoribbons (GNRs) have attracted much interest due to their largely modifiable electronic properties. Manifestation of these properties requires atomically precise GNRs which can be achieved through a bottom–up synthesis approach. This has recently been applied to the synthesis of width‐modulated GNRs hosting topological electronic quantum phases, with valence electronic properties that are well captured by the Su–Schrieffer–Heeger (SSH) model describing a 1D chain of interacting dimers. Here, ultralow bandgap GNRs with charge carriers behaving as massive Dirac fermions can be realized when their valence electrons represent an SSH chain close to the topological phase boundary, i.e., when the intra‐ and interdimer coupling become approximately equal. Such a system has been achieved via on‐surface synthesis based on readily available pyrene‐based precursors and the resulting GNRs are characterized by scanning probe methods. The pyrene‐based GNRs (pGNRs) can be processed under ambient conditions and incorporated as the active material in a field effect transistor. A quasi‐metallic transport behavior is observed at room temperature, whereas at low temperature, the pGNRs behave as quantum dots showing single‐electron tunneling and Coulomb blockade. This study may enable the realization of devices based on carbon nanomaterials with exotic quantum properties.

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Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Cited by 334 publications

References 36 publications

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

PMMA-Assisted Plasma Patterning of Graphene

Massive Dirac Fermion Behavior in a Low Bandgap Graphene Nanoribbon Near a Topological Phase Boundary

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