ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

Abstract

Abstract-We report a new structure, called the shielded Ohmic contact (ShOC) rectifier which utilizes trenches filled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high-barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.