Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Electric field induced phase transition and domain structure evolution in (Pb, La)(Zr, Sn, Ti)O3 single crystal

“…6 It is generally accepted now that some of the most interesting properties occur when the compositions are in the vicinity of the morphotropic phase boundary (MPB). [7][8][9] Typically, such compositions would display an irreversible AFE-to-FE phase transition at room temperature when the electric field is first applied to the virgin sample. 10,11 The FE in remains upon removal of the applied field and keeps an energy stored state with a high remnant polarization (P r ).…”

Shift of morphotropic phase boundary in high-performance [111]-oriented epitaxial Pb (Zr, Ti) O3 thin films

“…The intensity of spectrum line becomes weakened when the Zr/Ti ratio moves to 40/60, which might be caused by a complex coexistence of tetragonal phase and rhombohedral phase. 16 The spectrum line shows a remarkable change as the Zr/Ti ratio decreases to 30/70, different from its neighbors. Visible features of tetragonal structure started to display especially when we took the low frequency period (below 400 cm À1 ) as an example.…”

“…14,15 Our preceding study reported an interesting finding in [001]-oriented epitaxial PNZT thin films on [100]-cut STO singlecrystalline substrates, in which the MPB composition shifted to a higher Zr content region (Zr/Ti $ 70/30), whereby the highest electrical properties were obtained. 16 According to theoretical analysis, the tetragonal phase was more preferable to deposit on [100]-cut STO substrate for a smaller lattice mismatch than the rhombohedral phase, while the rhombohedral phase was predominant on 5 ] as raw materials together with 2-methoxyethanol, acetylacetone, and methanamide as solvent, chelating agent, and stabilizing agent, respectively. A total of 10 mol% excess Pb was added into all solutions with different Zr/Ti ratios to compensate for the Pb loss by oxidation and evaporation during the thermal process subsequently.…”

Ferroelectric properties of highly (111)-oriented Pb(Zr1−x, Tix)O3 thin films with different Zr/Ti ratios

“…The coexistence of F M and F T phases was also evidenced in polycrystalline PZT thin film with x = 0.47 prepared by a chemical polymeric method [15]. It was suggested that the MPB of epitaxial Nb-doped PZT thin films can be shifted to the higher Zr/Ti ratio of x = 0.3 from the conventional ratio of x = 0.48 due to the misfit compressive stress induced by the substrate [16].…”