SHG phase matching in GaSe and mixed GaSe1_1-xS_x, x0.412, crystals at room temperature

Zhang, Hongzhi; Kang, Zhi‐Hui; Jiang, Yun; Gao, Jin‐Yue; Wu, Feng-Guang; Feng, Zhi-Shu; Andreev, Yu. M.; Ланский, Г. В.; Morozov, Alexander; Sachkova, Elena I.; Sarkisov, S. Yu.

doi:10.1364/oe.16.009951

Cited by 53 publications

(45 citation statements)

References 19 publications

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“…The absorption coefficient decreased to 0.03-0.06 cm 21 in the mid-IR and 1 cm 21 in the THz range for optimally doped crystals. Optimal doping concentrations were established as 2-3 mass.% of S in GaSe 55,61 , 0.5-1 mass.% of In 69 , 0.07-0.38 mass.% of Te 49,61 , 0.01-0.02 mass % of Al 36,42 , and 0.5 mass.% of Er 12 , by charge composition. Optimally doped crystals also have 2-3 times lower absorption coefficients compared to that for undoped GaSe; down to 0.2 cm 21 in the THz range.…”

Section: Discussionmentioning

confidence: 99%

“…The closer the match in the atomic size of the substituting atoms, the larger the mixing ratio of solid solution crystals that may be grown with suitable optical quality, as in the following: GaSe 12x S x with x f 0.44 (11 mass. % of S) 51 , Ga 12x In x Se with x 5 0.03 (2.32 mass.%) of In 55 , and GaSe 12x Te x with x 5 0.012 (1 mass.%) 49 . In turn, the higher the permitted limit in the mixing ratio, the wider the variation in the optical and mechanical properties that can be achieved.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…This shift almost removes the nonlinear two photon absorption for a near-IR laser pump 7,74,75 and shifts the PM curves for parametric frequency conversion processes in the same direction, allowing for optimization by S-content control. However, the short-wave shift of the PM curves results in the necessity to design dispersion equations as a function of the mixing ratio 55 . In addition, the shift of the long-wave edge from 20 mm down to 14 mm limits the long-wave cutoff of difference frequency generation (DFG).…”

Section: Optical Properties Of Gase Doped With Isovalent Elements Formentioning

confidence: 99%

“…Bearing in mind the low Er solubility 21 , the increase appears to be due largely to the improved optical quality. It was established properly that the maximal transparency window 42,49,55,61,69 and THz range 51 absorption coefficients for all properly doped crystals grown by the modified method, i.e., with a rotating heat field, are 2-3 times lower (f0.03-0.06 cm 21 ) than those for crystals grown by the conventional vertical Bridgman method. These data are confirmed by the increased frequency conversion efficiency.…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Discussionmentioning

confidence: 99%

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

Section: Optical Properties Of Gase Doped With Isovalent Elements Formentioning

confidence: 99%

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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show abstract

“…Appropriate doping by various isovalent elements that form isostructural compounds, e.g. sulphur (S), tellurium (Te), indium (In), etc., is an effective way to obtain improvements of GaSe physical properties 7,8 . The optimal Te-doping of 0.38 mass.…”

Section: Introductionmentioning

confidence: 99%

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

et al. 2015

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Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe & GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm 2 for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.

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Growth of GaSe and GaS single crystals

Кох¹,

Andreev²,

Svetlichnyi³

et al. 2011

Cryst. Res. Technol.

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Key words synthesis of chalcogenides, Bridgman technique, nonlinear optic materials.The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A new simple method of synthesis with single-zone heating furnace is proposed. Growth of crystals was performed by modified Bridgman method with the use of rotating heat field. Raman and optical depth spectra show high structural and optical quality of obtained crystals.

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SHG phase matching in GaSe and mixed GaSe1_1-xS_x, x0.412, crystals at room temperature

Cited by 53 publications

References 19 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

Growth of GaSe and GaS single crystals

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