Sharp microfaceting of (001)-oriented cerium dioxide thin films and the effect of annealing on surface morphology

Growth Mechanism, Microstructure, and Surface Modification of Nanostructured CeO2 Films by Chemical Solution Deposition

“…[13] Similar faceting has been reported for other CeO 2 films deposited by rf magnetron sputtering. [50] An important result, in view of the application of such films as buffer layers, is that the surface disorder of the films is suppressed by post-processing, as indicated by the ordered array of spots appearing in the RHEED pattern (Fig. 11c).…”

Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

“…The {111} planes had lowest surface energy (9.6 eV nm À 2 ) among the low index planes of (110), (211), (100), (210) and (310) which had surface energy of 15.3, 16.7, 20.3, 20.4 and 22.4 eV nm À 2 , respectively [20]. Therefore, thus {111} planes were energetically favorable to be formed at the late deposition stage of CeO 2 film [20][21][22][23][24]. The R dep of the film prepared at T dep =943 K (P L =52 W) was 6 μm h À 1 (Fig.…”

“…6(e, f)). One type was rectangular grains with wedge-shaped caps whose facets attributing to {111} planes [20], as marked by A and B in Fig. 6(e).…”

Growth of thick MOD-derived CeO2−x buffer layer with less residual carbon for coated conductors

“…In recent years, a great deal of effort has been invested in studying growth behavior and the preparation of thick film in coated conductors, which are multi-layer composite materials composed of metal substrate/buffer layer/superconducting layer/protective layer, in order to guarantee a sufficient barrier function against metal and oxygen diffusion as well as obtain high-quality CC tape [4,5]. However, crack formation, rough surface and degraded bi-axial texture become the main challenge to the growth of a thick oxide film on textured substrate.…”

“…Although CeO 2-x presents a relatively high lattice mismatch of 8 % with NiW substrates, a good epitaxial growth is still possible for the CeO 2-x film [2,15]. For thick single-layer CeO 2-x film, a completely flat and continuous surface is difficult to be achieved because (001) facets were formed by truncation of the as-grown sharp facets of the (111) surface [5]. High-temperature annealing performed at *1000°C or higher temperature in an oxidizing atmosphere can promote high epitaxy and crystallinity, as well as stabilization of the flat (001) surface of PVD-derived CeO 2-x film [16].…”