Sharp Metal-Insulator Transition in a Random Solid

Rosenbaum, T. F.; Andres, K.; Thomas, G. A.; Bhatt, R. N.

doi:10.1103/physrevlett.45.1723

Cited by 347 publications

(110 citation statements)

References 27 publications

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“…3. This is accomplished by comparing the data at 8 T for B//E which is described by equation (1) (where ωτ is field dependent, but unity at the peak in ε x "), with the data for B⊥E as described by equation (7), where the resonant peak now occurs for the conditions in equation (9). Since ωτ does not depend on the field orientation, we can use equation (1) to compute the value of ωτ at the position of the shifted B⊥E peak, using the B//E data.…”

Section: Discussionmentioning

confidence: 99%

Debye relaxation in high magnetic fields

et al. 2008

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Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion ε(ω) characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for B⊥E, anomalous dispersion emerges in ε(ω) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response E H ⊥ B ⊥ E not previously described in magnetodielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.

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Section: Discussionmentioning

confidence: 99%

Debye relaxation in high magnetic fields

et al. 2008

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“…5 at the T 0 metal-insulator transition in Si:P has remained a puzzle for over a decade [1]. Stupp et al [2] recently have proposed a reanalysis of the Hence, the 6% smaller n, required by Stupp et al to raise p would not permit a self-consistent treatment of the observed critical behavior on both sides of the metal-insulator transition.…”

Section: Transitionmentioning

confidence: 99%

“…5 at the T 0 metal-insulator transition in Si:P has remained a puzzle for over a decade [1]. Stupp et al [2] recently have proposed a reanalysis of the data which gives p = 1 [2] is dominated by a nonrandom impurity distribution and should not be compared with the usual theories of critical phenomena.…”

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confidence: 99%

Critical behavior of Si:P at the metal-insulator transition

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TransitionThe apparent value of the conductivity exponent p =0. 5 at the T 0 metal-insulator transition in Si:P has remained a puzzle for over a decade [1]. Stupp et al. [2] recently have proposed a reanalysis of the Hence, the 6% smaller n, required by Stupp et al. to raise p would not permit a self-consistent treatment of the observed critical behavior on both sides of the metal-insulator transition.

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“…It is important to note that the localization effects have not been investigated in the theories on the B-doped diamond [24][25][26][27][28][29], although localization plays essential role in semiconductors. Actually, semiconductors have been a central field for the experimental study on the Anderson localization [38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in compensated and uncompensated semiconductors

Yanase

Yorozu

2008

Science and Technology of Advanced Materials

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We investigate the localization and superconductivity in heavily doped semiconductors. The crossover from the superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. The microscopic inhomogeneity and the thermal superconducting fluctuation are taken into account using the self-consistent 1-loop order theory. The superconductor-insulator transition accompanies the crossover from the host band to the impurity band. We point out an enhancement of the critical temperature T c around the crossover. Further localization of electron wave functions leads to the localization of Cooper pairs and induces the pseudogap. We find that both the doping compensation by additional donors and the carrier increase by additional acceptors suppress the superconductivity. A theoretical interpretation is proposed for the superconductivity in the boron-doped diamond, SiC, and Si.

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Sharp Metal-Insulator Transition in a Random Solid

Abstract: tration possesses the same activation enerqy a11 the conductance . When the Hall mobility arises from an excitation process the logarithmic corrections are modified by the lifetime which can be varied simply by varying the Fermi energy. *Sul:lnitted by v . Heine

Cited by 347 publications

References 27 publications

Debye relaxation in high magnetic fields

Debye relaxation in high magnetic fields

Critical behavior of Si:P at the metal-insulator transition

Superconductivity in compensated and uncompensated semiconductors

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