Shallow junctions by ion implantation and rapid thermal annealing

Hill, Chris

doi:10.1016/s0168-583x(87)80071-x

Cited by 29 publications

(4 citation statements)

References 14 publications

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“…A band of dislocation loops forms near the original amorphous/crystalline (a/c) interface during annealing [3]. For many device structures these defects will lie within depletion regions and consequently impair device performance [4]. We have proposed that the dislocation loops arise from excess self-interstitials (Si recoils) trapped and condensed into extra planes of atoms just beyond the original a/c interface [ 5 ] .…”

Section: Introductionmentioning

confidence: 99%

The production of excess interstitials by pre-amorphisation

Thornton¹,

Paus²,

Webb³

et al. 1988

J. Phys. D: Appl. Phys.

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Single-crystal silicon has been amorphised by bombardment with Si+, Ge+ or Sn+ ions. After conventional annealing (900 degrees C, 30 min) some disorder remained. The amount was measured by ion channelling and transmission electron microscopy and compared with the quantity of excess interstitials predicted by the Monte Carlo computer program TRIM. Both the predicted and measured integral disorder fell as the atomic weight of the projectile increased. Because lattice strain also leads to a reduction in ion channelling this had to be taken into account when estimating residual damage from back-scattering analysis. The results indicate that there are six scattering centres per interstitial.

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Section: Introductionmentioning

confidence: 99%

The production of excess interstitials by pre-amorphisation

Thornton¹,

Paus²,

Webb³

et al. 1988

J. Phys. D: Appl. Phys.

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“…1,2 If the high-energy implant has to be restricted only to certain regions of the wafer, part of the wafer must be covered with a masking material to block the implanted ions. 1,2 If the high-energy implant has to be restricted only to certain regions of the wafer, part of the wafer must be covered with a masking material to block the implanted ions.…”

Section: Introductionmentioning

confidence: 99%

Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry

Shi¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inAdsorption, diffusion, dewetting, and entrapment of acetone on Ni(111), surface-modified silicon, and amorphous solid water studied by time-of-flight secondary ion mass spectrometry and temperature programmed desorption J. Chem. Phys. 135, 164703 (2011); 10.1063/1.3656071 Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization Appl. Phys. Lett. 86, 044105 (2005); 10.1063/1.1852715 Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II-VI semiconductors using negative cluster ions Determination of trace metallic impurities on 200-mm silicon wafers by time-of-flight secondary-ion-mass spectroscopy J.The range profiles of 1.0 MeV P ϩ implanted into silicon with a dose of 1ϫ10 15 cm Ϫ2 at angles of 7°, 45°, and 60°were measured by time-of-flight secondary ion mass spectrometry. The longitudinal and lateral range spreads at normal incidence were deduced from the measured profiles at oblique incidence. The measured profiles were systematically shallower and narrower than the TRIM'95͑TRansport of Ions in Matter, 1995͒ predictions, but good agreement can be obtained if the electronic stopping power formula is slightly increased in the higher energy region during the calculations.

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“…The requirement for shallow junction formation has arisen as device dimensions shrink into the submicron regime for higher packing densities and faster device switching speeds (1,2). Shallow junctions are generally formed by a low-energy ion implantation followed by low thermal budget processing (3) using rapid thermal annealing (RTA) at high temperature for short time or low-temperature furnace annealing.…”

mentioning

confidence: 99%

Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing

Kim

Kinoshita

et al. 1991

J. Electrochem. Soc.

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The role of extended defect evolution on the anomalous diffusion of boron during rapid thermal annealing (RTA) was studied by investigating the diffusion behavior of boron implanted into various Si substrates using secondary ion mass spectroscopy and transmission electron microscopy, i.e., predamaged wafers with low dose Si implantation, pre-) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-06-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-06-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-06-15 to IP

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Shallow junctions by ion implantation and rapid thermal annealing

Cited by 29 publications

References 14 publications

The production of excess interstitials by pre-amorphisation

The production of excess interstitials by pre-amorphisation

Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry

Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing

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