Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

Current, Michael; Ohno, N.; Hara, Tohru

doi:10.1016/s0168-583x(96)00537-x

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…Boron implanted at 5 keV exhibits substantial diffusion following the rapid thermal anneal at 1000 • C. This is to be expected from previous evidence of transient enhanced diffusion [8][9][10] (TED) of implanted boron in silicon. In figure 1, TED can be clearly seen for the boron concentrations between 2 × 10 19 cm −3 and 2 × 10 16 cm −3 for sample S0 implanted with boron only.…”

Section: Boron Profilessupporting

confidence: 60%

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Nejim

Sealy

2003

Semicond. Sci. Technol.

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A significant retardation of transient enhanced diffusion of 5 keV boron implanted in silicon has been achieved when it was co-implanted with 1 MeV silicon. Almost complete retardation was observed when this was done in SOI substrates which isolate the layers containing most of the point defects due to the high energy silicon implant from the near surface regions. Measurements of the defect profile from the silicon implant using accurate Rutherford backscattering channelling analysis, coupled with high resolution SIMS analysis of the boron profile provide a comprehensive picture of the dopant/defects relationship. Other data from positron annihilation spectroscopy complete the picture for the vacancy-type defects, while data from spreading resistance measurements indicate the activation efficiency of the boron under these conditions. Other high energy implants were tested and a variety of SOI material was used to investigate the role of the depth of the barrier layer in retarding the TED.

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Section: Boron Profilessupporting

confidence: 60%

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Nejim

Sealy

2003

Semicond. Sci. Technol.

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Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Ohno¹,

Hara

Matsunaga³

et al. 2000

Materials Science in Semiconductor Processing

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Sheet Resistance of Ion Implanted Si(100) at Various Doses, Energies and Beam Currents

김형인¹,

정영완²,

이명희³

et al. 2011

Journal of the Korean Vacuum Society

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Simulations were performed using Crystal TRIM software under the same conditions used by previous researchers in order to clarify the mechanism that determines sheet resistance various doses, energies and beam currents. The results showed that the peak of the depth profile (R p) in the same sample gradually shifts inward and damage increases near the surface as the energy increases for As + equal dose of 1×10 15 /cm 2 implanted into Si(100) energies of 5, 10, and 15 keV. From a theoretical calculation of B + ion implantation processes at energy of 20 keV using parameters that correspond to 1 mA and 7 mA beam currents with the same dose of 5×10 15 /cm 2 , it was found that the higher beam currents resulted in more damage near the surface (＜100 nm). Likewise, In the simulations employing sets of doses (1×10 15 /cm 2 , 5×10 15 /cm 2) and beam currents (0.8 mA, 8 mA), more damage was produced at larger doses and higher current. Thus, sheet resistance at the surface was reduced by the intensified damage from increases in beam energy, dose and beam currents.

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Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

Cited by 3 publications

References 10 publications

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Sheet Resistance of Ion Implanted Si(100) at Various Doses, Energies and Beam Currents

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