Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

Aleshkin, V. Ya.; Andreev, B. A.; Гавриленко, В. И.; Erofeeva, I. V.; Козлов, Д. В.; Кузнецов, О. А.

doi:10.1134/1.1188029

Cited by 19 publications

(7 citation statements)

References 4 publications

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“…The techniques, all within the effective-mass approximation, range from the commonly employed variational techniques 6,7,8,9,10,11,12,13 to direct integration of the Schrödinger equation 14 and basis expansions. 15,16 The systems considered have, to the best of our knowledge, exclusively been III-V materials such as GaAs/Al x Ga 1−x As quantum wells, for both donors 6,7,8,9,10,11,14 and acceptors, 12,13,15,16 and the results are found to agree reasonably well with experimentally obtained values. 17,18,19,20,21 Particular aspects such as image charges 9 and the effect of screening of the impurity potential by the free carriers in the well 22 have also been investigated.…”

Section: Introductionsupporting

confidence: 76%

Donor states in modulation-doped Si/SiGe heterostructures

et al. 2003

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We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is non-variational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly non-isotropic due to the selection rules. The results obtained from calculations for Si/Si$_{1-x}$Ge$_x$ quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered.Comment: 17 pages, 10 figure

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Section: Introductionsupporting

confidence: 76%

Donor states in modulation-doped Si/SiGe heterostructures

et al. 2003

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“…The properties of resonant acceptor states are more poorly known and the first part of this paper is devoted to the influence of resonant acceptor states on intersubband light absorption. The acceptor state existence in quantum wells was experimentally confirmed with photoconductivity studies [3]. Optical phenomena related to the acceptors should be interesting because degeneracy of the valence band leads to lifting the polarization selection rules and both x,y-and z-polarized intersubband optical transitions become possible.…”

Section: Introductionmentioning

confidence: 85%

Light absorption related to hole transitions in quantum dots and impurity centers in quantum wells under external excitation

Firsov

Vorobjev

Shalygin

et al. 2009

J. Phys.: Conf. Ser.

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Light absorption related to hole transitions in quantum dots and impurity centers in quantum wells under external excitation Abstract. Optical absorption is studied in p-doped GaAs/AlGaAs quantum wells at lattice temperatures 4.2 -300 K. Features in the absorption spectrum are associated to hole transitions from ground impurity level to resonant impurity states and subbands. Absorption modulation related to hole redistribution between impurity and subband states is studied. Spectra of intraband absorption are studied in Ge/Si quantum dots in equilibrium and under interband optical excitation. Filling the excited states with nonequilibrium holes leads to arising the additional peak in absorption spectrum related to hole transitions from the excited state.

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“…The residual shallow acceptor concentration is estimated to be about 10 14 cm −3 . In the long-wavelength range (figure 2) the photoconductivity results from the optical transitions from the acceptor ground state to the continuum (to the hh1 subband) and to the excited localized states (and subsequent thermoionization) [4]. The binding energies of shallow impurities in QW heterostructures are known to be dependent on the impurity position in the well.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Resonant acceptor states in Ge/Ge_1-xSi_xMQW heterostructures

et al. 2000

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A new nonvariational theoretical approach allowing us to calculate both the localized and the continuum states of charge carriers in quantum well heterostructures in the presence of the Coulomb potential has been developed. The method has been used to calculate the energy spectra of shallow acceptors in strained Ge/GeSi multiple-quantum-well heterostructures. Optical transitions from the acceptor ground states to the resonant states have been revealed in the measured far-infrared photoconductivity spectra of the heterostructures.

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Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

Cited by 19 publications

References 4 publications

Donor states in modulation-doped Si/SiGe heterostructures

Donor states in modulation-doped Si/SiGe heterostructures

Light absorption related to hole transitions in quantum dots and impurity centers in quantum wells under external excitation

Resonant acceptor states in Ge/Ge_1-xSi_xMQW heterostructures

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Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

Cited by 19 publications

References 4 publications

Donor states in modulation-doped Si/SiGe heterostructures

Donor states in modulation-doped Si/SiGe heterostructures

Light absorption related to hole transitions in quantum dots and impurity centers in quantum wells under external excitation

Resonant acceptor states in Ge/Ge1-xSixMQW heterostructures

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Resonant acceptor states in Ge/Ge_1-xSi_xMQW heterostructures