Abstract-The rapidly developing semiconductor technology allows to implement sophisticated digital control in the programmable devices platforms (FPGAs, CPUs). However the increasing size and performance of the circuits has also a drawback at the failure sensitivity, in particular for soft errors due to ionizing radiation. The sensitivity to SEUs is related to the critical charge which strongly depends on the transistor dimensions and supplying voltage. The sensitivity to ionizing radiation increases faster than the circuits complexity due to Moore's law. Therefore the life critical systems and systems operating in radioactive environment have to deal with soft errors. The countermeasure can be special design techniques introducing the redundancy to the algorithms and/or circuit design allowing to detect and correct errors. The goal is to find the compromise between cost, performance and reliability. The development of such algorithms and systems must be supported by the test stand where the resistance to radiation influence can be evaluated.
I. XFELE uropean X-Ray Free-Electron Laser (XFEL) will be driven by 1.6 km long linac consisting of 116 superconducting accelerator modules supplied by 29 RF stations [1]. The accelerator will provide electron beam with energy of 20GeV and average beam power 600kW. The energy spread must be better than 1MeV that means 0.005% regulation precision. The RF field regulation will be provided by sophisticated digital LLRF system. Due to dark currents (from possible field emission in the accelerator cavities) there will be a background radiation (gammas and neutrons) in the XFEL linac tunnel. It is expected that dark current of several microamperes can reach an energy of about 100 MeV before being dumped in the beam-line. Since the LLRF electronics will be installed at the same tunnel ( Fig. 1) together with beam pipe the generated radiation is expected to influence the electronic devices. M.Grecki is with Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany (telephone: +49408998, e-mail: mariusz.grecki@desy.de).The ionizing radiation has a negative influence on electronic devices. It reduces the lifetime of the circuit and also can cause the temporary malfunction during circuit operation [3], [4], [5].The permanent effects are caused by excessive doses of radiation. Gamma photons cause charge accumulation in MOS gates that shifts the threshold voltage of the MOS transistor. The temporary effects (Single Event Effects -SEE) are caused by charged particles energetic enough to ionize the semiconductor by generating excessive electron/hole pairs [3]. The typical nuclear reaction of neutron and nucleus of boron 10 B (about 20% of boron commonly used as silicon dopant) creates α particle energetic enough to ionize the semiconductor on the way through (the typical range of α particles in silicon is several microns). Those ionized areas of semiconductor can conduct electric current until the excessive electric carriers recombine and thus random parts of the electronic circuits can be ...