SET to RESET Programming in Phase Change Memories

Karpov, I. V.; Kostylev, S. A.

doi:10.1109/led.2006.882527

Cited by 44 publications

(19 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, in literature it was proposed that amorphization is determined by the power density supplied to the cell [11], whereas our results seem to prove that crystallization is rather governed by a constant energy density rule, thus suggesting that GST crystallization and amorphization have different underlying physics. However, microscopic aspects related to GST phase change (as discussed, for example, in [12]) cannot be analyzed with the proposed measurement technique, which mainly aims to support an optimized design rule of memory device operating conditions in terms of SET time and power.…”

Section: Cell Structure and Experimental Set Upcontrasting

confidence: 66%

On the RESET-SET transition in Phase Change Memories

Puzzilli

Irrera

Padovani

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

View full text Add to dashboard Cite

We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.

show abstract

Section: Cell Structure and Experimental Set Upcontrasting

confidence: 66%

On the RESET-SET transition in Phase Change Memories

Puzzilli

Irrera

Padovani

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

View full text Add to dashboard Cite

show abstract

“…1, the electric current ͑"reset"͒ pulse through the crystalline ͑set͒ phase generates heat, which melts the material. 4 After the current is turned off, the melted portion rapidly cools down, freezing in the two to three orders of magnitude more resistive amorphous ͑reset͒ state. When the voltage across the amorphous phase grows above the threshold value V th , the system switches to a low resistive state.…”

Section: Introductionmentioning

confidence: 99%

Fundamental drift of parameters in chalcogenide phase change memory

Karpov

Mitra

Kau

et al. 2007

Journal of Applied Physics

165

100

View full text Add to dashboard Cite

We present the data on temporal (t) drift of parameters in chalcogenide phase change memory that significantly complement the earlier published results. The threshold voltage Vth and the amorphous state resistance R are shown to drift as ΔVth∝v ln t and R∝tα in broad intervals spanning up to nine decades in time; the drift coefficient v depends on glass parameters and temperature, but does not depend on device thickness. We have demonstrated that drift saturates at long enough times that can be shorten with temperature increase. All available data on drift dynamics are fully consistent with the classical double-well-potential model, which gives simple analytical expressions for the observed temporal dependencies including numerical parameters.

show abstract

“…In addition, the highresistive layer retards the heat dissipation though the lowresistive layer due to its low heat conductivity. 6) Figure 1(b) is the cross-sectional view TEM image of the fabricated contact structure consisting of the sputter-deposited GeSbTe film and the SiGe/Si multilayer electrode. This image was taken after the phase transition of the GeSbTe film.…”

Section: Resultsmentioning

confidence: 99%

Heating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films

Lee

2013

Mater. Trans.

View full text Add to dashboard Cite

This work reports the detailed manufacturing process of polycrystalline SiGe/Si thin film layers and their heating effect on phase transition of GeSbTe chalcogenide films. The SiGe and Si films were grown successively by chemical vapor deposition, and different methods were applied to dope the SiGe films depending on their semiconducting nature because of phosphorus autodoping. Although the minimum dopant concentration for the n-type SiGe films was much higher than that for the p-type SiGe films, the lowest transition currents were measured almost same with both p-and n-type SiGe films. The transition current decreased further with reducing contact area between the GeSbTe and SiGe films. These results indicate that the contact area scaling and the formation of SiGe/Si films with a dopant concentration smaller than a critical value are both required to induce the phase transition of GeSbTe at a submilliampere level of transition current.

show abstract

SET to RESET Programming in Phase Change Memories

Cited by 44 publications

References 6 publications

On the RESET-SET transition in Phase Change Memories

On the RESET-SET transition in Phase Change Memories

Fundamental drift of parameters in chalcogenide phase change memory

Heating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films

Contact Info

Product

Resources

About