Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

Wang, Hong; Meng, Fanben; Cai, Yurong; Zheng, Liyan; Li, Yuangang; Liu, Yuanjun; Yue, Jiang; Wang, Xiaotian; Chen, Xiaodong

doi:10.1002/adma.201301983

Cited by 222 publications

(179 citation statements)

References 54 publications

(64 reference statements)

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“…Due to versatile properties, such as biodegradability, biocompatibility, bioresorbability, optical transparency, and light weight, proteins, the most readily accessible biomolecules can be used as an attractive building blocks for the development of RRAM devices and endow these electronic memories with excellent performance and environmental benignity 31, 32. They have been both served as an active switching component of a passive substrate to construct two‐terminal RRAM devices with impressive ON/OFF ratios, ultralow density, low operating voltage, good degradability, and tunable‐resistive switching behavior 33, 34, 35, 36, 37, 38, 39…”

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confidence: 99%

Phototunable Biomemory Based on Light‐Mediated Charge Trap

et al. 2018

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Phototunable biomaterial‐based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)‐silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy‐dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode‐based device are related to the space‐charge‐limited‐conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode‐based devices. Incorporation of CDs with light‐adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs‐based resistive random access memory by performing the ultraviolet light illumination studies on as‐fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next‐generation biocompatible electronics.

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confidence: 99%

Phototunable Biomemory Based on Light‐Mediated Charge Trap

et al. 2018

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“…[ 32,76,161 ] Intriguingly, both the memory and threshold resistive-switching behaviors, regarding nonvolatile and volatile states, respectively, could be achieved in fi broinbased devices ( Figure 10 a,b). [ 76 ] Memory resistive switching demands that both the HRS and LRS must be stable in the absence of an external voltage.…”

Section: Resistive-switching Memory Devicesmentioning

confidence: 99%

Silk Fibroin for Flexible Electronic Devices

et al. 2015

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Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

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“…Finally, at sufficiently high voltage (region III), where the electrons fully occupy trap sites, an abrupt surge of current is observed, similar to the formation phenomena reported in numerous resistive switching devices. [4][5][6][7][11][12][13][14][31][32][33][34][36][37][38][39][40][41][42][43][44][45] In the present system, this abrupt turn-on is likely associated with a large local concentration of oxygen vacancies or to the development of a conducting metal (Zn) filaments with the a-ZnO layer. 33 To test the model, we have subjected HAT ZnO devices to different voltage pulse sequences.…”

Section: -mentioning

confidence: 99%

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

et al. 2016

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In non-volatile memory technology, various attempts to overcome both technology and physical limits have led to development of neuromorphic devices like memristors. Moreover, multilevel resistance and the potential for enhanced memory capability has attracted much attention. Here, we report memristive characteristics and multilevel resistance in a hydrogen annealed ZnO nanowire device. We find that the memristive behavior including negative differential resistance arises from trapped electrons in an amorphous ZnO interfacial layer at the injection electrode that is formed following hydrogen annealing. Furthermore, we demonstrate that it is possible to control electrons trapping and detrapping by the controlled application of voltage pulses to establish a multilevel memory. These results could pave the way for multifunctional memory device technology such as the artificial neuromorphic system.

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Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

Cited by 222 publications

References 54 publications

Phototunable Biomemory Based on Light‐Mediated Charge Trap

Phototunable Biomemory Based on Light‐Mediated Charge Trap

Silk Fibroin for Flexible Electronic Devices

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

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