Serially connected tantalum and amorphous indium tin oxide for sensing the temperature increase in IGZO thin-film transistor backplanes

Yu, Eun Seong; Kim, SeoungGyun; Kang, SeoJin; Lee, HyuckSu; Moon, Seung-Jae; Lee, Jongmo; An, SeungBae; Bae, Byung Seong

doi:10.1080/15980316.2023.2185563

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Cited by 2 publications

(2 citation statements)

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“…High reliability and reproducibility of the proposed ALD-based IGZO films make them practical for TFT-based applications such as display backplanes and logic circuits. 17…”

Section: Resultsmentioning

confidence: 99%

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Park,

Jeon

et al. 2024

J. Mater. Chem. C

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“…High reliability and reproducibility of the proposed ALD-based IGZO films make them practical for TFT-based applications such as display backplanes and logic circuits. 17…”

Section: Resultsmentioning

confidence: 99%

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Park,

Jeon

et al. 2024

J. Mater. Chem. C

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“…To overcome the reliability issues associated with a-IGZO technology, researchers are diligently exploring multiple experimental avenues. These efforts encompass a broad spectrum of changes, with a focus on optimizing the materials used, introducing supplementary processes, and implementing structural enhancements [4][5][6].…”

mentioning

confidence: 99%

Improving the electrical stability of a‐IGZO TFT through gate surround structures

Yu,

Kim,

Moon

et al. 2023

Electronics Letters

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This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively enveloping all four sides of the a‐IGZO channel. This shielding configuration ensures stable operation, even under light illumination. Moreover, capitalizing on the stability under light conditions, the authors observed a remarkable threefold improvement in the mobility of the fabricated TFT with this proposed structure, resulting in a substantial 156% increase in current. Furthermore, in the negative bias illumination stress test, the proposed TFT exhibited minimal fluctuations when compared to its single‐gate counterpart, further underscoring its exceptional and robust performance.

show abstract

Serially connected tantalum and amorphous indium tin oxide for sensing the temperature increase in IGZO thin-film transistor backplanes

Cited by 2 publications

References 21 publications

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Improving the electrical stability of a‐IGZO TFT through gate surround structures

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