Serial combination of ohmic and capacitive RF MEMS switches for large broadband applications

Schauwecker, B.; Strohm, K.M.; Mack, T.; Simon, Winfried; Luy, J.-F.

doi:10.1049/el:20040014

Cited by 10 publications

(9 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be prevented by reducing the high switching voltage of 39 V to lower holding voltage before applying the RF power. However, the RF power can be extended by combining the single Toggle Switch with a shunt airbridge switch [11]. In this application the shunt airbridge switch can be closed in the first step.…”

Section: Power Measurements Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Toggle switch: investigations of an RF MEMS switch for power applications

Simon

Mack

Schauwecker

et al. 2005

IEE Proc., Microw. Antennas Propag.

Self Cite

View full text Add to dashboard Cite

Section: Power Measurements Resultsmentioning

confidence: 99%

“…The Toggle Switch, developed by DaimlerChrysler and IMST [8][9][10][11][12][13], consists of a movable metallic cantilever in the signal line of a coplanar waveguide (CPW) environment (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

Toggle switch: investigations of an RF MEMS switch for power applications

Simon

Mack

Schauwecker

et al. 2005

IEE Proc., Microw. Antennas Propag.

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage

Angira

Rangra

2016

Engineering Science and Technology, an International Journal

View full text Add to dashboard Cite

A B S T R A C TThis paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, float metal concept is utilized to reduce the RF overlap area between the movable structure and central conductor of CPW for improving the insertion loss of the device. This has been achieved without affecting the downstate response. Further, float metal also makes the down-state behavior predictable in terms of resonant frequency. For reducing the pull-in voltage, the switch is implemented with cantilever type of structure on either side of the transmission line. This structure also has the capability to inductively tune the isolation optimum value to the different bands and thus can be used in the reconfigurable RF systems. The device shows an insertion loss less than 0.10 dB, a return loss below 36.80 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the conventional switch. In the OFF state, proposed device shows two isolation peaks i.e. 48.80 dB at 4.5 GHz and 54.56 dB at 9.7 GHz, when either or both cantilevers are electro-statically actuated to the down-state position respectively. The conventional device has a single isolation peak in the X-band. In addition, improvement of around 3 times in the bandwidth has also been achieved. The designed switch can be used at device and sub-system level for the future multiband communication applications.

show abstract

“…The other approach is to combine series and shunt switches to realize multi-band devices. However, higher insertion loss and the large chip area make them unsuitable for future compact systems Rebeiz 2000, 2001;Schauwecker et al 2004). In the presented paper, a novel Abstract This paper presents a new type of capacitive shunt RF-MEMS switch.…”

Section: Introductionmentioning

confidence: 99%