A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch

Angira, Mahesh; Rangra, Kamaljit

doi:10.1007/s00542-014-2378-2

Cited by 12 publications

(5 citation statements)

References 20 publications

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“…The S parameters of CPW transmission line characteristics can be employed to do the performance analysis of the switch. In the upstate position, S 11 parameter gives the return loss of the switch while S 21 parameter decides the insertion loss [7,12,13]. In the downstate position, S 21 gives the isolation of the switch.…”

Section: Rf Parameters' Analysismentioning

confidence: 99%

“…Micro-electromechanical systems (MEMSs)-based switches have been overcome all the problems associated with FET-based switches. MEMS switches have replaced FET switches due to their low power consumption with better RF performance in terms of iso- [7][8][9][10][11][12]. Capacitance analysis of these shunt switches shows that they can also be used for tunable capacitor application.…”

Section: Introductionmentioning

confidence: 99%

“…These switches are also in demand since the fabrication of these MEMS-based switches does not require any new fabrication technology; they are compatible enough to the existing technology for the fabrication. MEMS switches are most successful designs among other MEMS-based designed devices, and they are capable of working efficiently in the range of 20-100 GHz[1][2][3][4][5][6][7]. MEMS switches with different designs are presented in the articles[3][4][5][6][7].…”

mentioning

confidence: 99%

“…MEMS switches are most successful designs among other MEMS-based designed devices, and they are capable of working efficiently in the range of 20-100 GHz[1][2][3][4][5][6][7]. MEMS switches with different designs are presented in the articles[3][4][5][6][7]. There are two types of MEMS switches which exist: (i) series MEMS switch and (ii) shunt MEMS switch.…”

mentioning

confidence: 99%

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Design of An Improved Micro-Electro-Mechanical-Systems Switch for RF Communication System

Kurmendra

Kumar

Pertin

2018

Lecture Notes in Electrical Engineering

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This paper presents the design of improved MEMS shunt switch for RF communication applications. The switch was designed to provide a better performance in 10-100 GHz range. The switch was optimized in terms of width of the beam and air gap between the fixed type beam and dielectric layer to improve the isolation, insertion, and return loss. This study concludes that materials with high k-dielectrics and high Young's modulus are desirable for better performance in highfrequency range. The isolation, insertion, and return loss for the designed switch are obtained as -12 dB, -0.05 dB, and -45 dB, respectively.

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Section: Rf Parameters' Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Design of An Improved Micro-Electro-Mechanical-Systems Switch for RF Communication System

Kurmendra

Kumar

Pertin

2018

Lecture Notes in Electrical Engineering

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“…It is necessary to optimize pulldown voltage and gap to avoid self-biasing and external vibrations on the membrane. Therefore, membranes are united with the anchor to achieve high recovery force thus aiding to recover the membrane's position [5].…”

Section: Specifications and Materialsmentioning

confidence: 99%

Multi-Dielectric & Multi-Band operations on RF MEMS

Gogna¹,

Gaba²,

Jha³

et al. 2016

Transactions on Electrical and Electronic Materials

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Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (-87.5 dB) and low insertion loss (-0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

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