Sequential infiltration
synthesis (SIS) into poly(styrene)-
block
-maltoheptaose
(PS-
b
-MH) block copolymer
using vapors of trimethyl aluminum and water was used to prepare nanostructured
surface layers. Prior to the infiltration, the PS-
b
-MH had been self-assembled into 12 nm pattern periodicity. Scanning
electron microscopy indicated that horizontal alumina-like cylinders
of 4.9 nm diameter were formed after eight infiltration cycles, while
vertical cylinders were 1.3 nm larger. Using homopolymer hydroxyl-terminated
poly(styrene) (PS–OH) and MH films, specular neutron reflectometry
revealed a preferential reaction of precursors in the MH compared
to PS–OH. The infiltration depth into the maltoheptaose homopolymer
film was found to be 2.0 nm after the first couple of cycles. It reached
2.5 nm after eight infiltration cycles, and the alumina incorporation
within this infiltrated layer corresponded to 23 vol % Al
2
O
3
. The alumina-like material, resulting from PS-
b
-MH infiltration, was used as an etch mask to transfer
the sub-10 nm pattern into the underlying silicon substrate, to an
aspect ratio of approximately 2:1. These results demonstrate the potential
of exploiting SIS into carbohydrate-based polymers for nanofabrication
and high pattern density applications, such as transistor devices.