Poly(styrene)-<i>block</i>-Maltoheptaose Films for Sub-10 nm Pattern Transfer: Implications for Transistor Fabrication

Löfstrand, Anette; Jam, Reza Jafari; Mothander, Karolina; Nylander, Tommy; Mumtaz, M.; Vorobiev, Alexeï; Chen, Wen‐Chang; Maximov, Ivan

doi:10.1021/acsanm.1c00582

Cited by 8 publications

(14 citation statements)

References 59 publications

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“…When fitting models to the data, the infiltrated PS-OH layer could be modelled as one layer. A high infiltration selectivity between MH and PS-OH have previously been reported for other SIS processes [10]. The effect of process parameters on PS-OH was investigated to ensure preservation of infiltration selectivity.…”

Section: Process Parameter Effect On Ps-oh Infiltrationmentioning

confidence: 89%

“…To verify the concept of using a semi-static infiltration method to fabricate etch masks for pattern transfer, a thin film of PS-b-MH was self-assembled on top of a silicon substrate using a method reported elsewhere [10]. The film was semi-statically infiltrated with four cycles at 80 • C, using 75/45 ms TMA/H 2 O pulses, and 20 s precursor exposure, resulting in a hybrid material with alumina in the MH block.…”

Section: Infiltration Into Ps-b-mh For Pattern Transfermentioning

confidence: 99%

“…Previously reported results showed the effect of number of infiltration cycles in dynamic infiltration using multiple pulses of TMA/H 2 O per cycle into MH and PS-OH, respectively, as well as the infiltration selectivity, and sub-10 nm pattern transfer into silicon using an infiltrated PS-b-MH template [10]. The maximum infiltrated amount of infiltrated Al 2 O 3 into MH was then found to be 23 vol%, which was sufficient to perform a pattern transfer to an aspect ratio of 2:1.…”

Section: Introductionmentioning

confidence: 99%

“…Introduction of subsequent vapors of oxygen containing molecules, such as water, may then adsorb and react, to eventually form a metal oxide. This process has previously been studied for a number of materials, such as of the precursor trimethyl aluminum (TMA) into poly(metyl methacrylate) (PMMA) [8], poly(2-vinylpyridine) (P2VP) [9], hydroxyl-terminated poly(styrene) (PS-OH) [10], and maltoheptaose (MH) [10]. Functional groups that have been identified to react with TMA precursor are, e.g., hydroxyl groups (-OH) [11], carbonyl groups (>C=O) [8], and pyridines [12].…”

Section: Introductionmentioning

confidence: 99%

“…Some of the characterization techniques for SIS are Fourier transform infrared spectroscopy (FTIR) [13], quartz crystal microbalance (QCM) [14], scanning transmission electron microscopy (STEM) tomography [15], ellipsometry [16], grazing incidence small angle X-ray scattering (GISAXS) [8], and grazing incidence small angle neutron scattering (GISANS) [17]. Furthermore, specular neutron reflectometry has previously been reported to characterize layer thickness, roughness and chemical composition before and after SIS of MH and PS-OH [10]. By reflecting a neutron beam at a sample, and detecting the reflected intensity in various angles, the data can be fitted to a model of the sublayers [18].…”

Section: Introductionmentioning

confidence: 99%

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Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer

et al. 2022

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Vapor phase infiltration into a self-assembled block copolymer (BCP) to create a hybrid material in one of the constituent blocks can enhance the etch selectivity for pattern transfer. Multiple pulse infiltration into carbohydrate-based high-χ BCP has previously been shown to enable sub-10 nm feature pattern transfer. By optimizing the amount of infiltrated material, the etch selectivity should be further improved. Here, an investigation of semi-static sequential infiltration synthesis of trimethyl aluminum (TMA) and water into maltoheptaose (MH) films, and into hydroxyl-terminated poly(styrene) (PS-OH) films, was performed, by varying the process parameters temperature, precursor pulse duration, and precursor exposure length. It was found that, by decreasing the exposure time from 100 to 20 s, the volumetric percentage on included pure Al2O3 in MH could be increased from 2 to 40 vol% at the expense of a decreased infiltration depth. Furthermore, the degree of infiltration was minimally affected by temperature between 64 and 100 °C. Shorter precursor pulse durations of 10 ms TMA and 5 ms water, as well as longer precursor pulses of 75 ms TMA and 45 ms water, were both shown to promote a higher degree, 40 vol%, of infiltrated alumina in MH. As proof of concept, 12 nm pitch pattern transfer into silicon was demonstrated using the method and can be concluded to be one of few studies showing pattern transfer at such small pitch. These results are expected to be of use for further understanding of the mechanisms involved in sequential infiltration synthesis of TMA/water into MH, and for further optimization of carbohydrate-based etch masks for sub 10 nm pattern transfer. Enabling techniques for high aspect ratio pattern transfer at the single nanometer scale could be of high interest, e.g., in the high-end transistor industry.

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Section: Process Parameter Effect On Ps-oh Infiltrationmentioning

confidence: 89%

Section: Infiltration Into Ps-b-mh For Pattern Transfermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer

et al. 2022

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Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition

Löfstrand

Jam

Svensson

et al. 2022

Adv Elect Materials

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Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost‐effective processing techniques to fabricate small‐pitch vertical III–V nanowires over large areas will be an important step toward realizing dense gate all‐around transistors, having high electron mobility, and low power consumption. It is demonstrated here, how arrays of III–V nanowires with a controllable number of rows, ranging from one single row up to bands of 500 nm, can be processed by directed self‐assembly (DSA) of block copolymer (BCP). Furthermore, it is shown that the DSA‐orientation with respect to the substrate's crystal direction affects the nanowire facet configuration, and thereby the nanowire spacing and gate all‐around deposition possibilities. A high χ poly(styrene)‐block‐poly(4‐vinylpyridine) BCP pattern directed by electron beam lithography‐defined guiding lines is transferred into silicon nitride. The silicon nitride is then used as a selective area metal‐organic vapor phase epitaxy mask atop an indium arsenide (InAs) buffer layer on a silicon platform to grow vertical InAs nanowires at 44–60 nm row pitch. Finally, deposition of high‐κ oxide and titanium nitride at this high pattern density is demonstrated, to further illustrate the considerations needed for next generation transistors.

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Recent developments of block copolymers in nonvolatile memory and artificial synapses

Chang,

Mulia,

et al. 2023

Journal of Polymer Science

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The rapid development of artificial intelligence has significantly accelerated computational calculation and enlarged the demands in information storage. Therefore, high‐performance memory devices based on new architectures and functionalities, such as resistive memory, transistor memory, and phase change memory, along with their applications in neuromorphic computing and artificial synapse have arisen extensive interest among researchers. In order to improve the memory performance, block copolymer electrets with diversified self‐assembled structures have been extensively developed, and their structure–performance properties have been investigated. Therefore, in this focused review, a variety of block copolymers combining incompatible polymers, such as hydrophilic/hydrophobic, polar/nonpolar, and conjugated/insulating polymers, are introduced in this focused review. The design concepts and recent advances of block copolymers in nonvolatile memory and artificial synapses were addressed. With these divergent structure designs, block copolymers are regarded as potential candidates to provide high performance in memory device applications. This review sheds light on the great potential and importance of block copolymers for optoelectronic device applications.

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Poly(styrene)-block-Maltoheptaose Films for Sub-10 nm Pattern Transfer: Implications for Transistor Fabrication

Cited by 8 publications

References 59 publications

Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer

Sequential Infiltration Synthesis into Maltoheptaose and Poly(styrene): Implications for Sub-10 nm Pattern Transfer

Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition

Recent developments of block copolymers in nonvolatile memory and artificial synapses

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