Sensors based on MIS structures for study of ionization radiations

Андреев, В. В.; Бондаренко, Г. Г.; Andreev, D. V.; Akhmelkin, D. M.

doi:10.1109/mwent.2018.8337203

Cited by 2 publications

(4 citation statements)

References 11 publications

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“…In the paper we utilize two types of radiation MOS sensors. The first type is implemented on the basis of MOS capacitors with different areas manufactured on a single semiconductor crystal [15]. The second type of the sensors is the p-channel MOSFET with channel length of 6 µm and width of 700 µm.…”

Section: Methodsmentioning

confidence: 99%

“…Thus, both types of sensors have the same dielectric film formed in common technological process. This dielectric film allows to implement the high-field injection of electrons into the dielectric for used sensors [15][16][17][18][19][20][21] what is the main distinctive feature of these. In order to initiate the mode of high-field electron injection we utilized an experimental setup realized by means of precision source/measuring device of constant current (voltage) NI PXIe-4135 which was controlled by the special program implemented in NI LabVIEW.…”

Section: Methodsmentioning

confidence: 99%

“…Nowadays in the field of medicine, space devices, nuclear power, etc., metal-oxide-semiconductor (MOS) sensors of a radiation are widely utilized [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Most frequently, these sensors are based on p-channel MOSFET (radiation sensitive field effect transistors (RADFET) sensors).…”

Section: Introductionmentioning

confidence: 99%

“…As a result, one observes a change of threshold voltage of RADFET sensors. Using reference dependencies acquired at earlier stage, one calculates an absorbed dose on the basis of threshold voltage shift [1,[9][10][11][12][13][14][15]. One of the main techniques to raise the sensitivity of RADFET sensors is an applying of positive voltage to the transistor gate [1,4,9,14].…”

Section: Introductionmentioning

confidence: 99%

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Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Andreev

Бондаренко

Андреев

et al. 2020

Sensors

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The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

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Section: Methodsmentioning

confidence: 99%