Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Abstract

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation

“…[13][14][15] The acquired experimental results are in good agreement with the reference data and our previous results, which were acquired using MIS structures with a similar gate dielectric. [1,5,6,19,[25][26][27][28] In accordance with these results, when the injection current causes the formation of fields higher than 6.5 MV cm À1 , the buildup of positive charge in the gate dielectric at a distance of 3-5 nm from the cathode greatly influences the charge degradation of SiO 2 films with a thickness of 60 nm. The generation of positive charge is caused by the buildup of holes, which are formed as a result of inter-band impact ionization and the hole injection from the anode, and, moreover, as a result of redistribution of hydrogen in the gate dielectric.…”

Mathematical models of MOS transistors with induced and ion-doped conditions in energy engineering

“…where 𝐸𝐸 𝑘𝑘𝑘𝑘 = 6 * 10 Substituting formulas (18) and ( 12) into ( 14) and integrating the last expression over the channel length, we obtain in the general case an implicit expression:…”

Radiation sensitive MOSFETs irradiated with various positive gate biases

“…New types of these transistors are being intensively investigated, with the use of new technologies (Abe et al, 2020;Cramer et al, 2018;Jain et al, 2020;Kahraman et al, 2020;Lai et al, 2017;Lee et al, 2018;Liu et al, 2016;Tamersit, 2019;Zeidell et al, 2020), as well as the commercial transistors (Carvajal et al, 2017). Very intensive researches are being carried out in order to improve the characteristics of RADFETs, primarily their sensitivity and recovery (Andreev et al, 2020;Aleksandrov, 2015;Biasi et al, 2020;Carbonetto et al, 2020;Dubey et al, 2018;Kulhar et al, 2019;Sampaio et al, 2020;Yilmaz et al, 2017).…”