Sensor based on a non-ideal heterojunction to indicate X-ray images

Смынтына, В. А.

doi:10.15407/spqeo7.02.222

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…In addition, some marked prospects of these nonideal heterostructures in devices fixation ray images [1]. Another area of application material CdS-Cu2S moving towards the development of new gas-chemical sensors [2].…”

Section: Introductionmentioning

confidence: 99%

INVESTIGATION OF CHEMICAL AND PHASE COMPOSITION OF CdS-Cu2S SENSORIC LAYERS

Borschak¹,

Brytavskyi²,

Куталова³

2015

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A set of studies aimed at clarifying the deviation from the stoichiometry of CuxS compound during the formation and followed over time to establish the characteristics of changes in the chemical composition of the heterojunction components were carried out. The question of relationship between optoelectrical properties of heterostructures and distribution of stoichiometry in the layer of copper sulfide is open, informative and very important for the practical implementation of the developed sensor. Electrochemical analysis and study by X-ray diffraction for large samples set were conducted.

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Section: Introductionmentioning

confidence: 99%

INVESTIGATION OF CHEMICAL AND PHASE COMPOSITION OF CdS-Cu2S SENSORIC LAYERS

Borschak¹,

Brytavskyi²,

Куталова³

2015

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“…The CdS and Cu 2 S compounds are of great interest owing to their unique properties in variation of composition and their potential applications in numerous fields [1,2], such as sensor elements in X-ray imaging devices [3], solar cells [4], and super ionic conductors, photodetectors, and photothermal converters [5][6][7][8][9]. Cadmium sulfide CdS is also widely used as a promising material in applications of solar cells [10,11].…”

Section: Introductionmentioning

confidence: 99%

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Gaubas

Borschak

Brytavskyi

et al. 2013

Advances in Condensed Matter Physics

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Properties of polycrystalline CdS layers, employed in formation of the CdS-Cu 2 S heterostructures, have been studied by combining contactless techniques of the time and spectrally resolved photoluminescence (TR-PL) spectroscopy and microwaveprobed photoconductivity (MW-PC) transients. The confocal microscopy has been employed to correlate the homogeneity of photoluminescence and grain size in CdS layers. Three types of samples with crystallite grain size of <1 m (the I-type) and of 2-10 m of homogeneous (II-type) and inhomogeneous (III-type) grain distribution have been separated. The simultaneous record of MW-PC and TR-PL responses ensures the same sampling area on the layer under investigation, as both (MW-PC and TR-PL) signals are generated by the same UV laser excitation beam. Two PL bands peaked at 500 and 700 nm were revealed. It has been demonstrated that photoluminescence intensity strongly depends on the properties of the polycrystalline 15-26 m thick CdS layers with equilibrium carrier density of about 1.5 × 10 13 cm −3 , which serve as the substrates to form CdS-Cu 2 S junctions. The different carrier decay components were ascribed to different microareas with characteristic MW-PC and PL decay lifetimes of 2-10 ns, ascribed to microcrystallites with PL instantaneous decay lifetimes of 40-200 ns, and MW-PC decay lifetimes in the range of 100-1000 s attributed to the inter-crystallite areas of CdS polycrystalline material.

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