The photovoltaic properties of CdS crystals with combined alloying have been investigated. An analytical expression for the dependence of the coefficient of damping of the intensities of exciting and quenching light has been received. For the first time the concentration of fast recombination centers has been estimated.
The processes at short-wave limit of the quenching of the photocurrent were studied. The possibility of creating a new type of device -a sensitive photometer (not on the intensity of light, but on its wavelength), and the combined temperature-voltage tester.The process of hole oscillation under photoexcitation from R-centers is investigated. The quantum yield for infrared light is determined. The effect of the applied voltage on the form of the spectral distribution curves of the photocurrent quenching was found and explained. The concentration of R-centers in the samples is calculated.This publication is a continuation of the reviews [1-2]. For the sake of preservation of generality of work continuous numbering of sections is chosen. Numbers of formulas and figures are presented by sections. References in each article are given individually.Cadmium sulfide crystals are used in our studies as a convenient model material. Obtained results and constructed models are also applied to other semiconductors.
Abnormal dependence of volt-farad characteristics of «nonideal» heterojunctiоn barrier capacity is investigated. It is shown that in heterojunctions with the big concentration and non-uniform distribution of defects tunnel currents essentially influence on the barrier capacity size. The model for an explanation of abnormal barrier capacity dependence on the voltage, using tunneling-recombination mechanism of carriers carry through the area of a spatial charge is offered. The put forward assumptions put in a model basis, are confirmed experimentally.
The technology of processing of semiconductor crystals is developed in the corona discharge. It is established that as a result of this exposure, the samples acquire alternating spectral sensitivity. The observed phenomenon is explained by the emergence of a saddle of the potential barrier in the surface region of the element, the unusual properties which can allow the creation of a new type of device.
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