Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation

Ristić, Goran S.; Jevtic, A.; Ilić, Stefan D.; Dimitrijević, Strahinja; Veljković, Sandra; Palma, A.; Stanković, S.; Andjelković, Marko

doi:10.1109/miel52794.2021.9569096

Cited by 3 publications

(9 citation statements)

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“…It was shown that the dependence of ∆VT on Kair for VG,irr = 0 V is linear up to the investigated air kerma of 50 Gy [26]:…”

Section: Resultsmentioning

confidence: 95%

“…The results of the threshold voltage shift, ∆V T , during irradiation with V G,irr = 21 V (maximum gate polarization used), for all three X-ray beams, are shown in Figure 2. The case with the minimum value of the gate polarization of V G,irr = 0 V (zero gate polarization) was considered in [26]. All used gate polarizations, including zero gate polarization, show the same behavior.…”

Section: Resultsmentioning

confidence: 99%

“…The characteristics of X-ray beams, the mean energies and air kerma rates are given in Table 1. During irradiation, an automatic system for measuring the electrical transfer characteristics was used [26,30]. This system contains the custom-made switching and bias unit (SABU) [30], and for these experiments a specially designed printed circuit board with relays (PCBR) [26], in which the eight VDMOSFETs were placed, was implemented.…”

Section: Methodsmentioning

confidence: 99%

“…During irradiation, an automatic system for measuring the electrical transfer characteristics was used [26,30]. This system contains the custom-made switching and bias unit (SABU) [30], and for these experiments a specially designed printed circuit board with relays (PCBR) [26], in which the eight VDMOSFETs were placed, was implemented. The PCBR is connected with SABU via two DSUB cables-one DSUB-25 is for relay control, and the other DSUB-9 is for transistors biasing.…”

Section: Methodsmentioning

confidence: 99%

“…In this case study, we investigate the sensitivity, as a main dosimetric parameter, of commercial p-channel VDMOSFETs to X-rays depending on different positive voltages at the gate (a zero gate voltage case was presented in [26]). This transistor type is potentially suitable for radiation dosimetry because it has a relatively thick oxide of about 100 nm.…”

Section: Introductionmentioning

confidence: 99%

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Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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“…It was shown that the dependence of ∆VT on Kair for VG,irr = 0 V is linear up to the investigated air kerma of 50 Gy [26]:…”

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%