Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing

Dixit, Ankit; Samajdar, Dip Prakash; Chauhan, Vibhuti

doi:10.1109/ted.2021.3107368

Cited by 27 publications

(10 citation statements)

References 30 publications

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“…The 5. Results observed in this paper show excellent agreement with the data presented in [7,[16][17][18], which signifies that the comparative analysis performed in this article is authentic for biomedical applications.…”

Section: Sensitivity Comparison For Dielectric Variationsupporting

confidence: 86%

“…Certainly, label-free dielectric modulated (DM) FET biosensors are one such alternative as they are capable to detect biomolecules with different dielectric constant values and are cost efficient as compared to the existing technologies [5][6][7][8][9]. Also, TiO 2 nanowires discussed in literature are good examples of glucose and vitamin detections using novel device techniques [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Biswas

Rajan

Samajdar

2021

Silicon

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TFET based label-free biosensors are fast, sensitive and more power efficient as compared to CMOS biosensors, which are prone to short channel effects (SCEs). However, literature is flooded with various TFET biosensors that have become the reason of dilemma for researchers during pandemic situations like COVID-19. Therefore, in this work, a physically doped (PD), charge plasma (CP) and electrically doped (ED) dielectric modulated (DM) TFET based label-free biosensors are compared, which cover almost the entire range of doping and junctionless devices. Also, we found that the ED based TFET biosensors provide better current sensitivities of 5.10 × 10 7 , 4.77 × 10 8 and 7.11 × 10 8 for biomolecules with K=12, positive charge= 1 × 10 13 C/ cm 2 and negative charge= -1 × 10 13 C/cm 2 respectively. Hence, ED-DM-TFET based biosensors can act as promising candidates to provide better detection and identification quality.Keywords TFET . Biosensor . Physically doped (PD) . Charge plasma (CP) . Electrically doped (ED)

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Section: Sensitivity Comparison For Dielectric Variationsupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Biswas

Rajan

Samajdar

2021

Silicon

Self Cite

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“…The thicknesses of the ferroelectric (t fe ), oxide (t ox ), and channel (t ch ) are 5nm, 2nm, and 20nm, respectively. GE-FJ-BioFET analyses each dielectric constant to identify biomolecules, including biotin, APTES, protein, and DNA [20]. The biomolecules are inserted into the gate stack's nano-cavities.…”

Section: Device Structure Simulation and Calibrationmentioning

confidence: 99%

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Yadav

Rewari

Pandey

2023

Preprint

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A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated for label-free detection of various biomolecules. A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows biomolecules to get immobilized. The immobilization of biomolecules in the cavity causes changes in electrostatic characteristics such as surface potential, input and output characteristics, transconductance, output conductance, gate capacitance, and cut-off frequency used as sensing metrics. The biosensor is also examined at different biomolecule concentrations, such as -1e12, 0, and 1e12. The transistor's sensitivity is then understood by looking at the fluctuation in threshold voltage, subthreshold swing, and switching ratio. Ferroelectric Junctionless BioFET and Gate Engineered Ferroelectric Junctionless BioFET performances have been compared. It has been found that the Gate Engineered Ferroelectric Junctionless BioFET shows the maximum improvement for protein (1202.4%, 111%, and 565%) and DNA (787.5%, 117.3%, and 600%). For ultrasensitive bio-sensing applications, the Gate Engineered Ferroelectric Junctionless BioFET is shown to be suitable.

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“…Table 3 illustrates a comparison of the optimized and calibrated device parameters with different 14-nm FinFET device technologies [28][29][30]. Finally, it should be highlighted that nowadays the interest for the FinFET technology is spreading more and more in many fields of application-such as single-molecule detection [31], pH sensing [32,33], biomedicine [34], label-free biosensing [35], 5G power amplifiers [36], energy harvesting [37], and space application [38], just to mention a few. This wide and ever-expanding range of applications makes evident the increasing need for an accurate optimization of the FinFET structure to satisfy the specific constraints and requirements.…”

Section: Device Optimizationmentioning

confidence: 99%

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

et al. 2021

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The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the advancement of this rapidly expanding technology, a 3D 14-nm SOI n-FinFET is performed and calibrated to the experimental data from IBM by using Silvaco TCAD tools. The calibrated TCAD model is then investigated to analyze the impact of changing the fin width, fin height, gate dielectric material, and gate length on the DC and RF parameters. The achieved results allow gaining a better understanding and a deeper insight into the effects of varying the physical dimensions and materials on the device performance, thereby enabling the fabrication of a device tailored to the given constraints and requirements. After analyzing the optimal values from different changes, a new device configuration is proposed, which shows a good improvement in electrical characteristics.

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Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing

Cited by 27 publications

References 30 publications

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

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