Sensitive Planar Semiconductor Detector From Microwave to IR Applications

Gradauskas, Jonas; Sužiedėlis, Algirdas; Ašmontas, Steponas; Širmulis, Edmundas; Kazlauskaitė, V.; Lučun, Andžej; Vingelis, Mindaugas

doi:10.1109/jsen.2009.2038654

Cited by 16 publications

(21 citation statements)

References 10 publications

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“…The contact resistivity of the p ++ -GaAs-based diodes was much higher, indicating a typical Schottky contact behaviour of both, large and small, diodes. The diode structures were transferred onto an elastic dielectric polyimide film in the same manner used for heterojunction diode fabrication [10]. Scattering of the contact resistivity values can be explained by a non-homogeneous recrystallization process during Ge/Ni/Au metal contact alloying into GaAs.…”

Section: Samples and Experimentsmentioning

confidence: 99%

“…However, a lot of other diodes, e.g. camel [7], planar-doped barrier [8], heterojunction [9,10], hot carrier [11][12][13], all operating on the basis of the major carrier phenomena in semiconductors are proposed as well. All these majority-carrier devices, except the Schottky diodes, belong to the class of bulk-barrier diodes.…”

Section: Introductionmentioning

confidence: 99%

“…In 1980 Lechner et al reported a heterojunction diode that detected microwave radiation on the GaAs/GaAlAs heterojunction barrier. Later on a sensitive heterojunction diode was used for the detection of electromagnetic radiation in a wide frequency range from microwaves to infrared frequency [10]. Formerly an original microwave diode was proposed by Harrison and Zucker [11] the operation of which was based on hot carrier phenomena in a semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…The number of fabrication process steps is minimized if compared to the production of the MW Schottky diode or the heterojunction diode [10]. The voltage signal induced across the terminals of diodes exposed to the millimetre wave radiation of the K a -frequency range is studied in this paper.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Planar asymmetric dual diode for millimetre wave detection and power measurement

Sužiedėlis¹,

Ašmontas²,

Gradauskas³

et al. 2018

physics

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The design of a simple cost-effective planar semiconductor microwave diode is proposed. The operation is based on hot carrier phenomena and rectification of microwave currents flowing through the structure composed of two diodes connected in series and having different active region areas. A simplified technological process and the use of simplex semiconductor material result in the reduction of both the time and the cost of fabrication of a dual microwave diode. By choosing an appropriate GaAs substrate, two types of microwave diodes were produced simultaneously: one almost demonstrating the ohmic behaviour and the other two having the asymmetrical Schottky-like I-V characteristic. The Schottky-like planar diodes exhibited a higher responsivity to millimetre range microwave radiation and a faster response to pulsed (down to a nanosecond scale) excitation, but the ohmic ones demonstrated better noise properties.

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Section: Samples and Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Planar asymmetric dual diode for millimetre wave detection and power measurement

Sužiedėlis¹,

Ašmontas²,

Gradauskas³

et al. 2018

physics

View full text Add to dashboard Cite

show abstract

“…Therefore, IR bandpass filters are needed to be carefully chosen, providing the high transmission and deep rejections to isolate the spectral regions of interest. Several IR bandpass filters have been introduced both in research and in commercial applications . However, polymer‐supported filters in the IR and THz region are still not readily available commercially.…”

Section: Broadband Farir Filter With Polymermentioning

confidence: 99%

Flexible terahertz and FarIR polymer‐supported filter

Sanphuang

Nahar

2018

Micro & Optical Tech Letters

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We present the design, fabrication, and measurement of a terahertz (THz) polymer‐supported filter. A periodic structure, frequency selective surfaces (FSS) is employed to provide bandpass characteristic for this filter design with polyimide (PI) film as a substrate. This PI film (13 μm thick) is very thin and thus provides a flexible support to the filter. The average extracted dielectric constant ε r is 3.35 and the average refractive index n s is 1.84. The final filter structure was fabricated using standard microfabrication process. The measured transmission response shows high percentage of transmission (~80%) with the peak at 0.58 THz and sharp roll‐off that covers the broad range of frequency from 0.1 to 1 THz (wavelength of 300 μm‐3000 μm).

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