Sensitive In _0.53 Ga _0.47 As/InP (SI) magnetic field sensors

Abstract

The usefulness of InGaAs/InP heterostructures for magnetic field sensor applications has been studied. Basic parameters of the Hall and magnetoresistive devices have been determined. Magnetic field sensitivities in a wide temperature range from 3.5 K to 300 K for layers with different carrier concentration from 2 · 10 20 m -3 to 8 · 10 23 m -3 have been measured. It is concluded that optimized lattice-matched InGaAs/InP heterostructures can be used as very sensitive magnetic field sensors.

Charge transport diagnosis by: I–V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

“…We present here a new method of characterization based on the use of the temperature-dependent parameters as a result of previously published works [23][24][25][26][27][28][29][30]. The measurements take the information, that the mono-crystalline MBE layers of the investigated semiconductors possess very complicated charge transport structure, highly dependent on temperature.…”

“…The parameters are defined in Appendix A. [28]. The points are calculated from the measured n H -T and r-T points and the curve from the curves n-T and r-T after solving the procedure described previously [21][22][23][24][25][26][27][28].…”

“…Another interpretation is the presence of compressive epitaxial strain in thin films [21,22] with lattice mismatch. Our hypotheses were previously described in [22][23][24][25][26][27][28][29][30] and this paper is the third part of the published continuation [29,30] cataloging our efforts to describe transport parameters in thin MBE-grown semiconducting epi-layers using numerical solution of the neutrality equation and numerical calculations of resistivity and mobility.…”