Measurements of n-InGaAs with MBE layers: Relevance of negative magnetoresistance in the investigated samples

Wolkenberg, A.

doi:10.1016/j.mssp.2014.04.010

Cited by 1 publication

(1 citation statement)

References 13 publications

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“…[9][10][11] In recent years, III-V compound films have often been produced using epitaxial growth, 12,13 with techniques such as metalorganic chemical vapor deposition (MOCVD or MOVPE) [14][15][16][17] and molecular beam epitaxy (MBE). [18][19][20] However, for these methods, the lattice mismatch between the In x Ga 1x As thin film and the substrate is the most important problem to be solved. Therefore, introducing a buffer layer or grade buffer layers between the epitaxial layer and the substrate is the common solution.…”

Section: Introductionmentioning

confidence: 99%

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

Zhao

Ding

et al. 2017

AIP Advances

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We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many large particles had formed on the GaAs substrate, indicating a violent reaction between the In and GaAs. This reaction became more violent with increasing temperature. Characterizing the generated phases by X-ray diffraction and transmission electron microscopy, we identified the particles as InxGa1−xAs compounds. Our results show that indium (In) reacted with single-crystal GaAs through this method to form InxGa1−xAs compounds. Moreover, during the synthesis of InxGa1−xAs by the sessile drop method, the molten In and GaAs exhibited wettability at 400–600 °C. This experiment lays the foundation for synthesizing InxGa1−xAs compounds only using the metal In and GaAs substrate by a simple method.

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