Sensing with optical fibres: an emerging technology

Tebo, Albert R.

doi:10.1007/978-1-4613-2263-4_14

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…Phototubes and photomultiplier tubes, pyroelectric devices, photochemical devices, bolometers, ion chambers filled with gas and photosensitive semiconductor devices (photoconductive cells, p-n junctions and Schottky-barrier photodiodes) are used as UV photodetectors [20][21][22][23][24][25]. We shall consider only the semiconductor devices and mainly devices with potential barriers.…”

Section: Photodetector Types Characteristics and Parametersmentioning

confidence: 99%

Semiconductor near-ultraviolet photoelectronics

Goldberg

1999

Semicond. Sci. Technol.

121

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After a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, p-n junction structure and Schottky barrier photodiodes are discussed. Characteristics of some light filters used in photodetectors and measuring devices are also reported. Now Si p-n structures are commonly used but Schottky diodes based on wide-gap (GaAsP, GaP, GaN, AlGaN, SiC) semiconductors are very attractive. They are insensitive to the infrared radiation and if necessary simple glass filters can be used for correcting the spectrum in such way that it covers just the near-UV region.

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Section: Photodetector Types Characteristics and Parametersmentioning

confidence: 99%

Semiconductor near-ultraviolet photoelectronics

Goldberg

1999

Semicond. Sci. Technol.

121

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“…Phase-modulated sensors are the most extensively studied of all the fiber optic sensor concepts because of their extremely high sensitivities (A. R. Tebo, 1982). Generally, the sensor employs a coherent light source and two fibers.…”

Section: Phase-modulated Optical Fiber Sensorsmentioning

confidence: 99%

Development of optical sensing based mems fabry- perot pressure sensors

Guo¹

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Optical metrology offers significant advantages in remote sensing and has been recently developed as an alternative to conventional piezoresistive and capacitive sensing techniques used for sensing applications capable of operating in harsh environments. Recent advancement in silicon micromachining techniques makes optical sensing devices more feasible for commercialization by reducing sizes and improving performance and manufacturability. Unfortunately, some common issues, such as signal-averaging effect induced by the non-planar pressurized deflection, crosssensitivity to temperature and measurement errors arising from the process-induced variations, are major stumbling blocks facing the successful realization of this type of pressure sensors. In this study, a high-performance single deeply corrugated diaphragm (SDCD) was developed to enable optical sensing technology to be better realized with MEMS technology. The key novelty marking the proposed SDCD is that it consists of a flat bottom-region that behaves as a normal flat diaphragm, and suspending sidewalls that serve as stress concentrator and buffer, thereby enhancing flatness of the diaphra,m under pressurized deflection while reducing temperature dependence by releasing the thermally induced stress. The non-planar deflection behavior of different types of sensing diaphragm was studied using FE analysis and the resultant signal averaging effects of different Fabry-Perot pressure sensors were modeled and simulated. Substantial reduction in signal averaging effect of Fabry-Perot pressure sensor using SDCD has been demonstrated. Based on the

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Sensing with optical fibres: an emerging technology

Cited by 2 publications

References 15 publications

Semiconductor near-ultraviolet photoelectronics

Semiconductor near-ultraviolet photoelectronics

Development of optical sensing based mems fabry- perot pressure sensors

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