Sensing Properties of Indium-Gallium-Zinc-Oxide Thin Films under the Influence of Thickness and Annealing Ambient

Abstract

In this study, indium-gallium-zinc-oxide (IGZO) thin films were investigated for detection of Nitrogen Dioxide (NO2) gas. IGZO films with a thickness range of 25–100 nm were deposited using IGZO (ZnO: Ga2O3:In2O3 = 1:1:1 mol.%) polycrystalline target on interdigitated Au electrode alumina substrates and annealed in different annealing atmosphere of Nitrogen (N2) and Oxygen (O2). The effects of the IGZO thickness and different annealing ambient on IGZO were investigated on sensing properties. The N2 ambient showed a superior response (S = Rgas/Rair) compared to O2 annealing by a factor of 2.3 times. In addition, the sensor response increases with film thickness up to 25 nm and decreases with an increase in thickness. The sensor showed a high response for the IGZO thin film (25 nm), which was 519 times that of the other sensors at 200 °C. The sensor recovery and response time improved, and the sensor selectivity was tested under different gases.

InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2

“…The energy gaps of InO and SnO 2 materials are 3.2 eV and 3.6 eV, 19 respectively. According to the research of others, 20,21 InO and SnO 2 will interact with NO 2 , NO, and O 3 reducing gases. A reaction is generated, thereby increasing the resistivity of the sensor to achieve the effect of sensing gas.…”

Gallium-V antireflective nanostructures by metal-assisted chemical etching for photodetector application

“…It means 100 nm IGZO can absorb 63% of incident photons. Thicker IGZO layer results in reduced mobility and increased roughness [157][158][159] , therefore 150 nm IGZO was chosen to ensure sufficient absorption of UV irradiation in IGZO. Wang et al [142] found that the GaAs nanowire/nanocone structure with a diameter of ~400-600 nm and height of ~400-600 nm shows outstanding light absorption performance.…”