Indium-gallium–zinc oxide (IGZO) thin-film gas sensors prepared via post-deposition high-pressure annealing for NO2 detection

Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes

“…13 Recent efforts have explored new functionalities for a-IGZO, particularly in the applications of chemiresistive gas sensors. 14,15 The unique characteristics of a-IGZO, characterized by its lack of grain boundaries and small grain size, make it particularly well-suited for sensing trace amounts of gases such as NO 2 , 16 O 3 , 17 and H 2 . 18 Until now, most IGZO-based gas sensors are based on the metal−semiconductor−metal (MSM) device structure, characterized by a simple planar design with symmetric interdigitated Au electrodes.…”

Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization

“…25,26 Due to the porous nature of IGZO, it has been considered a possible candidate as a sensing material for the detection of hazardous gases, including nitrogen dioxide (NO 2 ). 27–29 Consequently, extensive research has been conducted recently to improve the sensing performance of IGZO TFT gas sensors for NO 2 detection, with the majority of studies focusing on the material aspects of IGZO, such as the formation of a heterojunction, 27 implantation of fluorine, 28 and high-pressure annealing. 29 In contrast, the sensing performance of IGZO TFT gas sensors can be improved by using ferroelectricity.…”

“…27–29 Consequently, extensive research has been conducted recently to improve the sensing performance of IGZO TFT gas sensors for NO 2 detection, with the majority of studies focusing on the material aspects of IGZO, such as the formation of a heterojunction, 27 implantation of fluorine, 28 and high-pressure annealing. 29 In contrast, the sensing performance of IGZO TFT gas sensors can be improved by using ferroelectricity. The ferroelectric layer can be used as a gate oxide to change the threshold voltage ( V th ) of the TFT by depleting or accumulating an IGZO channel.…”

Realization of a Self-Powered InGaZnO MSM Ozone Sensor via a Surface State Modulated Photovoltaic Effect

“…Most studies on IGZO have thus far focused on TFTs and UV photodetectors. , Recently, a-IGZO has been explored to find new functionalities for chemiresistive gas sensing. − The sensitivity of a gas sensor increases rapidly as the grain size decreases when the grain radius approaches the Debye length, which is usually a few nanometers . Therefore, a lack of grain boundaries makes a-IGZO suitable for the detection of low levels of NO 2 , , H 2 S, and O 3 . To operate an a-IGZO-based gas sensor at room temperature, a conventional heating apparatus is replaced by a UV-light-emitting diode (LED) to provide the activation energy. , However, an input voltage is still required for measuring the changes in the sensor resistance. , To the best of the authors’ knowledge, no studies have been reported that focus on PV self-powered MSM gas sensors, especially those based on MOS.…”