Sensing Margin Enhancement Technique Utilizing Boosted Reference Voltage for Low-Voltage and High-Density DRAM

Kim, Suk Min; Song, Bomi; Jung, Seong‐Ook

doi:10.1109/tvlsi.2019.2920630

Cited by 12 publications

(3 citation statements)

References 23 publications

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“…Apart from the performance measurement of devices under development, FoM comparisons with other state-of-the-art market products are also considered. In general, the FoM assessment of NVM devices commonly focuses on basic characteristics in terms of operation speed, reliability, power consumption, scalability, and cost (Table 3) [15,[79][80][81][82][83][84][85][86][87][88][89]. Price ($/GB) <100k~10~1~1k~100k~100 10k…”

Section: Fom (Figure Of Merit) Of Memory Devicesmentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Section: Fom (Figure Of Merit) Of Memory Devicesmentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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“…Though other types of DRAM show advantages over 1T1C cell in read and write operations, the mostly used 1T1C cell has the smallest cell area, showing the best memory density compared to other DRAM cells [8]. With the significant growth in modern computing systems, DRAM has become a power/performance/energy bottleneck in data-intensive applications [9][10][11]. Power consumption is a major issue in low-power and portable devices.…”

Section: Introductionmentioning

confidence: 99%

“…As shown in Figure 1, a conventional sensing circuit of 1T1C DRAM is composed of an SA circuit, a precharge circuit, a write circuit, an isolation circuit and DRAM arrays [11,18]. In a typical SA circuit, the orange color part comprises two cross-coupled inverters, a PMOS and a NMOS transistor.…”

Section: Introductionmentioning

confidence: 99%

Low-Power Single Bitline Load Sense Amplifier for DRAM

Dai,

Lu,

et al. 2023

Electronics

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With the significant growth in modern computing systems, dynamic random access memory (DRAM) has become a power/performance/energy bottleneck in data-intensive applications. Both the power management mechanism and downscaling method face decreasing performance or difficulties in the smaller footprint of the DRAM capacitor. Since optimizing the circuit of sense amplifier (SA) is an efficient method to reduce energy consumption, we propose two single bitline load sense amplifier (SBLSA) circuits, i.e., a redundant voltage discharged SBLSA (RVD-SBLSA) circuit and a bit aware SBLSA (BA-SBLSA) circuit, to improve conventional and single bitline write (SBW) circuits. The RVD-SBLSA circuit utilizes a clamp diode to discharge redundant voltage over VDD/2 with an additional working stage. The BA-SBLSA circuit abandons the single bitline load (SBL) circuit during read and write ‘1’ operations. The RVD-SBLSA circuit can offer the lowest total energy consumption, and the BA-SBLSA circuit can make a better balance between energy consumption and latency. Through the simulation results, the proposed circuits can efficiently reduce energy consumption or balance energy consumption and latency and show huge potentials in very large-scale integrated circuits.

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An asymmetrically controlled sense amplifier with boosted sensing voltage difference for low-voltage and high-density DRAM

Wang³

et al. 2023

Microelectronic Engineering

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Sensing Margin Enhancement Technique Utilizing Boosted Reference Voltage for Low-Voltage and High-Density DRAM

Cited by 12 publications

References 23 publications

Memristive Non-Volatile Memory Based on Graphene Materials

Memristive Non-Volatile Memory Based on Graphene Materials

Low-Power Single Bitline Load Sense Amplifier for DRAM

An asymmetrically controlled sense amplifier with boosted sensing voltage difference for low-voltage and high-density DRAM

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