Semimetal to semiconductor transition in Bi/TiO<sub>2</sub> core/shell nanowires

Kockert, M.; Mitdank, R.; Moon, Hyungsik Roger; Kim, J.; Mogilatenko, A.; Moosavi, S. Hoda; Kroener, Michael; Woias, Peter; Lee, W.; Fischer, Saskia F.

doi:10.1039/d0na00658k

Cited by 3 publications

(1 citation statement)

References 29 publications

(60 reference statements)

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“…Especially when the size of a nanostructure becomes small enough (typically, remarkably smaller than the free-charge carrier mean-free path of Bi at a few µm) [33], its electronic structure (and thus its dielectric function) can change from that of the bulky structure and become sizedependent. Such size-shrinking-induced confinement effects are able to trigger semimetalsemiconductor transitions [77][78][79]. The confined semiconductive opens an increasing bandgap Eg upon a decrease in the structure size [80].…”

Section: Conclusion and Perspectivementioning

confidence: 99%

Lithography-Free Bismuth Metamaterials for Advanced Light Manipulation

Luan

Tian

2023

Photonics

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Bismuth shows outstanding optical properties, including a metal-like response in the ultraviolet-visible range and a dielectric character with a giant refractive index in the infrared range. In recent years, such unique properties have been employed to construct bismuth-based metamaterials with remarkable optical responses in these spectral regions, especially with cost-effective lithography-free methods. Such responses can be manipulated, both in an astatic way by suitable metamaterial design and in a dynamic way by harnessing the solid–liquid transition of bismuth. In this paper, we review the advances in this field and highlight the applications of such metamaterials to information technology production, energy harvesting and sensing.

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Section: Conclusion and Perspectivementioning

confidence: 99%

Lithography-Free Bismuth Metamaterials for Advanced Light Manipulation

Luan

Tian

2023

Photonics

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Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires

Dad,

Dziawa,

Zajkowska-Pietrzak

et al. 2024

Sci Rep

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We investigate the full and half-shells of Pb1−xSnxTe topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV–VI shell with respect to the III–V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The Pb1−xSnxTe solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV–VI shells are grown with different compositions spanning from binary SnTe, through Pb1−xSnxTe with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) Pb1−xSnxTe on the sidewalls of wurtzite GaAs NWs.

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