Semiconductor wafer bonding

Reiche, M.

doi:10.1002/pssa.200564509

Cited by 26 publications

(15 citation statements)

References 66 publications

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“…All these forces act only over short ranges and the effect depends on the specific surface conditions. Most important is the surface roughness [15]. On the other hand, also the chemistry of species on the silicon surfaces affects the different forces.…”

Section: Physics and Chemistry Of Semiconductor Wafer Direct Bondingmentioning

confidence: 99%

Wafer bonding in silicon electronics

Reiche

2009

Phys. Status Solidi (c)

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Semiconductor wafer bonding offers a new degree of freedom in the design of material combinations without the common restrictions of the structure of the materials bonded. It is already an established method for the industrial production of advanced substrates (SOI) applied as basic material in high‐performance device fabrication. SOI, i.e. a thin device layer on an insulator, is a promising concept for further device developments. The advantages of SOI can be combined with mobility enhancing materials such as strained silicon (SSOI) or germanium on insulator (GOI). The bonding process is not limited to a certain wafer diameter and is applicable to different material combinations which are important to integrate different functions on a chip (system on a chip, SoC). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Physics and Chemistry Of Semiconductor Wafer Direct Bondingmentioning

confidence: 99%

Wafer bonding in silicon electronics

Reiche

2009

Phys. Status Solidi (c)

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“…The materials used in our experiments were silicon bicrystals produced by wafer direct bonding under hydrophobic conditions [24]. The two starting wafers were (001) oriented n-type Czochralski-grown silicon with doping levels of 2 × 10 14 cm −3 (wafer A) and 2 × 10 15 cm −3 (wafer B).…”

Section: Microstructure Of Model Samplesmentioning

confidence: 99%

Structure, chemistry and electrical properties of extended defects in crystalline silicon for photovoltaics

Seibt

Abdelbarey

Kveder

et al. 2009

Phys. Status Solidi (c)

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The electronic properties of present‐day multicrystalline silicon (mc‐Si) materials for photovoltaic applications are strongly influenced by point defects, their mutual interaction and their interaction with dislocations and grain boundaries. This paper presents results from fundamental investigations of metal impurity interaction with extended defects, namely a small‐angle grain boundary and bulk microdefects. It is shown that the distribution of copper silicide precipitates closely follows the density of bulk microdefects indicating the underlying physics of ‘good’ and ‘bad’ grains frequently observed in mc‐Si. Co‐precipitation of copper and nickel in the same samples leads to virtually the same distribution of multimetal silicide precipitates which according to light‐beam induced current measurements show the same recombination activity as single‐metal silicide particles. Transmission electron microscopy is used to show that for copper‐rich and nickel‐rich conditions two types of silicides co‐exist, i.e. Cu3Si precipitates containing a small amount of nickel and NiSi2 precipitates containing some copper. Finally, phosphorus‐diffusion gettering (PDG) is discussed as the main gettering process used in presentday silicon photovoltaics. Special emphasis is put on the effect of extended defects and their interaction with metal impurities on PDG kinetics. It is shown that different limiting processes will be simultaneously operative in mc‐Si as a result of inhomogeneous bulk defect distributions (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…All four process types have been extensively studied (Ljungberg et al 1994;Plössl and Kräuter 1999;Reiche and Gösele 2012;Wiemer et al 2012). In hydrophobic bonds, the two silicon lattices are in contact (Reiche 2006). Wafer bonding of hydrophilic surfaces result in the presence of an oxide interfacial layer (Reiche 2006).…”

Section: Introductionmentioning

confidence: 99%

“…In hydrophobic bonds, the two silicon lattices are in contact (Reiche 2006). Wafer bonding of hydrophilic surfaces result in the presence of an oxide interfacial layer (Reiche 2006). Usually the oxide layer is 3-4 nm thick at room temperature or moderate temperature (Plössl and Kräuter 1999).…”

Section: Introductionmentioning

confidence: 99%