2012
DOI: 10.1103/physrevb.85.085302
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Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures

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Cited by 15 publications
(14 citation statements)
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References 32 publications
(34 reference statements)
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“…The spin of a donor-bound electron in fluorine-doped ZnSe represents a promising system for quantum information technologies. So far emission of indistinguishable single photons [1], photon entanglement [2] and optical control of single electron spins [3][4][5] were achieved. Studies of the electron spin dynamics of an ensemble of donorbound electrons demonstrated a spin dephasing time T * 2 of 33 ns and a longitudinal spin relaxation time T 1 of 1.6 µs [6,7].…”
mentioning
confidence: 99%
“…The spin of a donor-bound electron in fluorine-doped ZnSe represents a promising system for quantum information technologies. So far emission of indistinguishable single photons [1], photon entanglement [2] and optical control of single electron spins [3][4][5] were achieved. Studies of the electron spin dynamics of an ensemble of donorbound electrons demonstrated a spin dephasing time T * 2 of 33 ns and a longitudinal spin relaxation time T 1 of 1.6 µs [6,7].…”
mentioning
confidence: 99%
“…The latter technique was performed at an acceleration voltage of 24 keV to achieve an implantation profile with its maximum in the QW centre. After implantation a well defined annealing procedure was applied to the sample to recover local structural damage [5]. While the epitaxial -doping favorites a well defined placement of the F-donors in the QW centre, the lateral distribution is statistically and due to the ZnF 2 evaporation source a small probability remains to form fluorine complexes in the QW as well.…”
Section: Methodsmentioning
confidence: 99%
“…electronic and energetic structure) due to their natural imprinted size distribution, when fabricated with present material growth techniques. In contrast, single impurities in semiconductors may bridge the gap between "real" and "artificial atoms", because they provide identical atomic properties and can be easily integrated in the semiconductor by doping [4] or ion implantation [5] methods.…”
Section: Introductionmentioning
confidence: 99%
“…However, many qubit systems, especially solid-state qubit systems, do not possess a good cycling transition due to non-radiative decay mechanisms or selection rules. These qubit systems include quantum dot spins [63], fluorine impurities in CdTe [117], and silicon vacancy centers [118,119].…”
Section: Discussionmentioning
confidence: 99%