1992
DOI: 10.1103/physrevb.45.3507
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Semiconductor quantum-wire structures directly grown on high-index surfaces

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Cited by 248 publications
(77 citation statements)
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“…The driving force for this elongation is the strong ansitropic nature of the ͑311͒A-surface. 8 In the current case the QD density is so high that the QDs start to coalesce to form QWRs that are oriented along the ͓233͔-direction. In a previous study of QWR formation on an ͑001͒-oriented substrate the achievable QD density was found to be too low to achieve QWRs and as a result quantum dashes were formed instead.…”
mentioning
confidence: 99%
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“…The driving force for this elongation is the strong ansitropic nature of the ͑311͒A-surface. 8 In the current case the QD density is so high that the QDs start to coalesce to form QWRs that are oriented along the ͓233͔-direction. In a previous study of QWR formation on an ͑001͒-oriented substrate the achievable QD density was found to be too low to achieve QWRs and as a result quantum dashes were formed instead.…”
mentioning
confidence: 99%
“…Traditionally, the techniques used to fabricate QWRs are selective growth on patterned substrates 6 and growth on vicinal 7 or high-index surfaces. 8 Here we report a new technique, the formation of QWRs on ͑311͒A-oriented substrates by thermally induced redistribution and diffusion of constituent atoms of QDs grown by DE. Structural peculiarities of both the QDs and the QWRs are revealed by cross-sectional scanning tunneling microscopy ͑X-STM͒.…”
mentioning
confidence: 99%
“…The fundamental translation vectors of reciprocal lattice are: The bisectors plans as shown in figure 1 limit the Brillouin zone along the (0,1,-1) and (3,1,1) directions at the points X and Z . The coordinates of this points are, respectively,…”
Section: Computation Methodsmentioning
confidence: 99%
“…Among them the GaAs/AlAs (311) superlattices grown by molecular beam epitaxy (MBE) and who have a corrugated interface with gives rise to quantum wire-like structure [2][3][4][5][6][7]. This nanostructure find a great spectrum of technological application in nanoscale electronic and optoelectronic devices : spintronic devices reported very impressive result of optical anisotropy of the In 0.40 Ga 0.60 As grown by MBE on GaAs (311)A and GaAs (331)A substrates.…”
Section: Introductionmentioning
confidence: 99%
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