Semiconductor quantum dots as nanoelectronic circuit components

Das, Hirendra; Datta, Pranayee

doi:10.1080/17458080.2016.1178401

Cited by 13 publications

(6 citation statements)

References 15 publications

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“…The W-H plot for CdS and CZ5 is given in figures 4(a) and (b) respectively. Lattice parameters 'a' and 'c' for CdS and CdS/ZnS (1:5) samples are calculated using equation (3).…”

Section: Results and Data Analysismentioning

confidence: 99%

“…Semiconductor QDs of II-VI group have been attractive over the years to researchers due to their fascinating optical and electronic properties. CdS and ZnS are important II-VI semiconductors with a wide variety of applications in solar cells [1], light-emitting diodes [2], electronic RF filers [3], phosphors, optical sensors [4], optoelectronic devices and flat-panel displays [5] etc as well as has potential applications in biomedical field [6]. The emerging composite materials can be synthesized in the form of ternary, quaternary, or in core/shell type through manipulation of growth parameters.…”

Section: Introductionmentioning

confidence: 99%

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Coulomb-blockade oscillation in CdS, ZnS and CdS/ZnS core-shell quantum dots

Kalita¹,

Nanung²,

Das³

2023

Phys. Scr.

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CdS, ZnS and core-shell CdS/ZnS quantum dots (QDs) with different ratio concentration of core to shell (1:1, 1:2, 1:3, 1:4, 1:5) were synthesized and their structural, optical and electrical properties were studied with respect to the increase shell thickness. XRD exhibits the wurtzite structure of CdS QDs along with the cubic trace of ZnS. HRTEM images exhibit spherical shaped particle morphology for both CdS and CdS/ZnS core-shell QDs. The optical properties show a defect control mechanism in carrier transport. Enhancing shell thickness introduces higher defect density, defect induced crystal strain and charge separation which leads to quantum mechanical tunneling in determination of conduction mechanism through QDs. The current-voltage (I-V) characteristics of the QD devices shows an oscillatory behavior which may be attributed to coulomb-blockade oscillations because of quantum structure of QDs. Room temperature quantum oscillation behavior has been studied systematically for the synthesized semiconductor core/shell QDs which is the major finding of the present work. Mullen’s two tunnel junction model has been used for the QD devices, which is in agreement with the observed coulomb oscillations for R1<<R2 and C1<<C2, originated from defect induced surface and interface of core/shell structure. The present experimental results may contribute towards study and development of futuristic quantum oscillatory nanoscale devices.

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“…The W-H plot for CdS and CZ5 is given in figures 4(a) and (b) respectively. Lattice parameters 'a' and 'c' for CdS and CdS/ZnS (1:5) samples are calculated using equation (3).…”

Section: Results and Data Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coulomb-blockade oscillation in CdS, ZnS and CdS/ZnS core-shell quantum dots

Kalita¹,

Nanung²,

Das³

2023

Phys. Scr.

Self Cite

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“…Due to their small-scale sizes, the quantum dots exhibit interesting behaviors and properties like real atoms because of the effects of the spatial confinement on charge carriers. These properties have been intensively investigated both experimentally and theoretically and have led to a wide applications range [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Shape and quantum size effects on the electronic structure, oscillator strengths and state lifetimes of helium-like quantum dots

Doba,

Melingui Melono,

Motapon

2023

Phys. Scr.

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Transition energies, electric static polarizability, oscillator strengths and state lifetimes of helium-like quantum dots are determined as a function of their shape and size. A configuration interaction approach based on B-spline functions is used. We found that, the oscillator strengths present an extremum around a low value of the dot radius whatever the shape of the confining potential. This extremum is due to the pressure on the energy levels in such a way that for a particular value of the dot radius, the second electron in the excited one-electron state reaches the borders of the confinement potential. The extremum position depends on the impurity charge and the oscillator strength value at this point changes with the potential well shape. As well, the increase of the effective mass involves the shift of the position of the oscillator strength extremum towards weak radius values. The first excited state lifetime globally increases with the dot radius and the reduction of the nuclear charge but presents a shoulder for a certain low value of the dot radius mostly marked for a triangular form of the confining potential.

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“…Organic light emitting diode displays with QD color filters have recently been suggested as future display technology, and red, green, and blue QD color filter arrays are used to achieve a three-primary-color emission . Numerous studies have recently reported the fabrication of QD arrays with controllable size, shape, and composition. − QD arrays can be used not only in display technologies but also in nanoelectronics, optoelectronics, telecommunication devices, and quantum computing . Thus, large-area QD arrays fabricated with multiple types of QDs are a highly useful and promising technology .…”

Section: Introductionmentioning

confidence: 99%

“…5 Numerous studies have recently reported the fabrication of QD arrays with controllable size, shape, and composition. 6−10 QD arrays can be used not only in display technologies but also in nanoelectronics, 11 optoelectronics, 12 telecommunication devices, 13 and quantum computing. 14 Thus, large-area QD arrays fabricated with multiple types of QDs are a highly useful and promising technology.…”

Section: ■ Introductionmentioning

confidence: 99%

Quantum Dot Arrays Fabricated Using In Situ Photopolymerization of a Reactive Mesogen and Dielectrophoresis

Baliyan

Song

2020

ACS Appl. Mater. Interfaces

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Dielectrophoresis (DEP) is an excellent tool for manipulating small particles within a liquid or gas medium. However, when the size of the particles is too small, such as with quantum dots (QDs), it is difficult to manipulate the particles using DEP because the dielectrophoretic force (F DEP) depends on the volume of the particles and is therefore too weak to achieve particle migration. Herein, we demonstrate a novel method for controlling nanoscale QD particles using DEP by introducing photopolymerized reactive mesogen (RM) bead vehicles. The size of an RM bead is well-controlled by the RM concentration in the medium, and when the size is approximately 0.2 μm or larger, the RM beads can be arbitrarily manipulated using DEP under moderate electric fields. Interestingly, during photopolymerization, QD particles are easily absorbed by polymerized RM beads and most of the QDs are embedded within the RM beads. Hence, we can fabricate periodic QD arrays by manipulating the RM beads containing such dots. In addition, we can fabricate multicolor QD arrays by repeating the processes using different QD particles. The shape of a DEP-assisted QD-RM network pattern can be precisely predicted by calculating the gradient of the square of the electric field (∇E 2) and the corresponding F DEP. This new technology may be useful for the fabrication of optical devices, displays, photonic crystal devices, and bioapplications.

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Semiconductor quantum dots as nanoelectronic circuit components

Cited by 13 publications

References 15 publications

Coulomb-blockade oscillation in CdS, ZnS and CdS/ZnS core-shell quantum dots

Coulomb-blockade oscillation in CdS, ZnS and CdS/ZnS core-shell quantum dots

Shape and quantum size effects on the electronic structure, oscillator strengths and state lifetimes of helium-like quantum dots

Quantum Dot Arrays Fabricated Using In Situ Photopolymerization of a Reactive Mesogen and Dielectrophoresis

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