Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Steigerwald, A.; Xu, Ya‐Qiong; Qi, J.; Gregory, Justin M.; Liu, X.; Furdyna, J. K.; Varga, K.; Hmelo, Anthony B.; Lüpke, G.; Feldman, L. C.; Tolk, N. H.

doi:10.1063/1.3099341

Cited by 40 publications

(46 citation statements)

References 13 publications

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“…[13][14][15][16][17][18][19]23 Thomsen et al developed a simple thermoelastic model to describe the oscillatory response arising in such experiments in terms of a spatially and temporally dependent strain (g(z,t)) that depends on the complex index of refraction (ÑðE ph ; zÞ ¼ nðE ph ; zÞ þ ikðE ph ; zÞ, where E ph is the photon energy) and the photoelastic constants (@n=@g and @k=@g): 15…”

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confidence: 99%

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Steigerwald¹,

Hmelo²,

Varga³

et al. 2012

Journal of Applied Physics

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We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne++ for doses between 1011–1013 cm−2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

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confidence: 99%

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Steigerwald¹,

Hmelo²,

Varga³

et al. 2012

Journal of Applied Physics

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“…Picosecond acoustic interferometry (PAI) is a powerful opto-acousto-optic technique for nondestructive and noncontact testing of transparent materials at the nanoscale [1][2][3][4][5][6][7][8][9][10][11][12][13]. First, using an ultrashort pump laser pulse, a propagating picosecond coherent acoustic pulse (CAP) is launched into the material.…”

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confidence: 99%

Time-domain Brillouin scattering assisted by diffraction gratings

et al. 2018

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Absorption of ultrashort laser pulses in a metallic grating deposited on a transparent sample launches coherent compression/dilatation acoustic pulses in directions of different orders of acoustic diffraction. Their propagation is detected by delayed laser pulses, which are also diffracted by the metallic grating, through the measurement of the transient intensity change of the first-order diffracted light. The obtained data contain multiple frequency components, which are interpreted by considering all possible angles for the Brillouin scattering of light achieved through multiplexing of the propagation directions of light and coherent sound by the metallic grating. The emitted acoustic field can be equivalently presented as a superposition of plane inhomogeneous acoustic waves, which constitute an acoustic diffraction grating for the probe light. Thus the obtained results can also be interpreted as a consequence of probe light diffraction by both metallic and acoustic gratings. The realized scheme of time-domain Brillouin scattering with metallic gratings operating in reflection mode provides access to wide range of acoustic frequencies from minimal to maximal possible values in a single experimental optical configuration for the directions of probe light incidence and scattered light detection. This is achieved by monitoring the backward and forward Brillouin scattering processes in parallel. Potential applications include measurements of the acoustic dispersion, simultaneous determination of sound velocity and optical refractive index, and evaluation of samples with a single direction of possible optical access.

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“…In previous studies, quantitative defect profiles in He implanted GaAs 13 and also the optical damage cross section surrounding 400 keV Ne ++ -ion tracks in GaAs were experimentally determined with high sensitivity. 11 In addition, research on ion-implanted diamond revealed a fluence-dependent decrease in the real and increase in the imaginary parts of the refractive index as well as a sign reversal in the photoelastic coefficient.…”

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Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

et al. 2016

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Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

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Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Abstract: Articles you may be interested inDetermination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

Cited by 40 publications

References 13 publications

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Time-domain Brillouin scattering assisted by diffraction gratings

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

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