Semiconductor Optics

Abstract

The second edition, which appeared in 2005 and contains substantial updates and amendments compared to the first one and its corrected reprints, was again favourably received by the students and the scientific community worldwide.As a consequence, the present third edition became necessary. The changes introduced are, compared to the sedond edition, more limited, among others because the time elapsed between second and third edition is much shorter than the time between first and second one.The main chances concern the following points: The discussion about the density, at which an electron-hole plasma is formed, has been up-dated, in the section about photonic crystals a few comments on meta-materials have been added, several new and timely references have been included and some of the misprints have been removed.

Excitons in ultrathin organic-inorganic perovskite crystals

“…It yields a maximum increase of the exciton binding energy by a factor of four in a 2D system compared to the 3D counterpart (without any change in the electron-hole inteaction). 42 An additional contribution to the excitonic binding energy arises from the non-uniform dielectric environment, since the electric field between the electron and hole forming an exciton extends outside the inorganic layer into the surrounding medium. 43 This picture is supported by the Bohr diameter of the 1s exciton in bulk material of 2.8 nm 21 which is comparable to the layer thickness.…”

Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

“…Compared to previously reported results on doped sample by physic-sorption, the enhancement is much greater, indicating that Mo-O bonds are more effective doping source. Second, it is expected that the electrons can be effectively localized at the Mo-O bonds related defects with higher binding energy in this low dimensional material 23,24 which can suppress the thermal activation of excitons to auger non-radiative recombination and result in improved quantum efficiency.…”

Excited states of the free excitons in CuInSe2 single crystals

“…The technique based on the analysis of the exciton line diamagnetic shift is valid within the weak field approximation, which limits the accuracy of E b . 10,11 These issues are reflected in the considerable scatter of the E b A values in the literature, ranging from 4.3 to 39.1 meV ͑Refs. 6, 7, 9, 10, and 12-14͒ resulting in scattered values of the band gap.…”