2005
DOI: 10.1007/b138175
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Semiconductor Optics

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Cited by 322 publications
(379 citation statements)
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“…Since laser oscillations are likely caused by the formation of an electron-hole plasma (EHP) at high pumping intensities in single CdS (and ZnO NWs as a comparable NW laser system) [14,16,27,17], the approximately 1.24 times higher absorption for parallel polarization supplies the semiconductor more efficiently with charge carriers. This is further accompanied by a red-shift of the gain profile at the same pumping powers due to band gap renormalization effects in the EHP [28]. The red-shift of the gain profile, which in our case is achieved by changing the polarization from α = ± 90° to α = 0° and proven by the high polarization ratio for the low energy mode B, is usually obtained for an increase in pumping intensity under constant polarization [14,17].…”
Section: Resultssupporting
confidence: 51%
“…Since laser oscillations are likely caused by the formation of an electron-hole plasma (EHP) at high pumping intensities in single CdS (and ZnO NWs as a comparable NW laser system) [14,16,27,17], the approximately 1.24 times higher absorption for parallel polarization supplies the semiconductor more efficiently with charge carriers. This is further accompanied by a red-shift of the gain profile at the same pumping powers due to band gap renormalization effects in the EHP [28]. The red-shift of the gain profile, which in our case is achieved by changing the polarization from α = ± 90° to α = 0° and proven by the high polarization ratio for the low energy mode B, is usually obtained for an increase in pumping intensity under constant polarization [14,17].…”
Section: Resultssupporting
confidence: 51%
“…This feature is neither reproduced by theory nor assigned to vibronic replicas (51), as the latter would be strongly polarization dependent. We tentatively assign this feature to a polaritonic stopband (59,60): a strong, characteristic reflection found between the transversal and the longitudinal exciton-polariton branches. Similar features are observed in quasione-dimensional polymer crystals and TCNQ crystals (61)(62)(63)(64).…”
Section: Resultsmentioning
confidence: 87%
“…Among them, the substitutional Cu 2+ model proposed first by Dingle 9 has received much attention due to the distinct spectral features of a sharp zero-phonon line (ZPL) and a broad longitudinal optical (LO) phonon sideband at low temperature. [13][14][15] Taking into account only the coupling between one LO phonon mode and one electronic transition, Kuhnert and Helbig 13 employed a Poission distribution, I n ) S n e -S /n!, to fit the line shape of the green emission band and then obtained a Huang-Rhys factor of S ) 6.5. It is well-known that the Poission distribution simply gives only a backbone of the absorption or luminescence line shape of the electron-LO phonon coupling system.…”
mentioning
confidence: 99%