Semiconductor double quantum dot micromaser

Liu, Y.-Y.; Stehlik, J.; Eichler, Christopher; Gullans, Michael; Taylor, Jacob M.; Petta, J. R.

doi:10.1126/science.aaa2501

Cited by 128 publications

(225 citation statements)

References 39 publications

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“…Here, the source-drain bias continually repumps the excited state of the artificial atom, leading to population inversion and microwave frequency photoemission. For sufficiently high pumping rates, a transition to above-threshold masing has been achieved [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…The power gain is defined as G ¼ CP out =P in , where P out is the cavity output power and C is a normalization constant set such that G ¼ 1 with the device configured in Coulomb blockade [8,11]. In Fig.…”

Section: Cavity Gainmentioning

confidence: 99%

“…Qubits separated by relatively large distances have been coherently coupled using a cavity bus [4,5]. Finally, cQED enables the generation of classical and nonclassical light [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…The combination of superconducting resonators and semiconductors-in the form of DQDsprovides a versatile, electrically tunable quantum system that interacts strongly with light [8,17,18].…”

Section: Introductionmentioning

confidence: 99%

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Double Quantum Dot Floquet Gain Medium

et al. 2016

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Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here, we show that a single electron in a periodically driven double quantum dot functions as a "Floquet gain medium," where population imbalances in the double quantum dot Floquet quasienergy levels lead to an intricate pattern of gain and loss features in the cavity response. We further measure a large intracavity photon number n c in the absence of a cavity drive field, due to equilibration in the Floquet picture. Our device operates in the absence of a dc current-one and the same electron is repeatedly driven to the excited state to generate population inversion. These results pave the way to future studies of nonclassical light and thermalization of driven quantum systems.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Cavity Gainmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The combination of superconducting resonators and semiconductors-in the form of DQDsprovides a versatile, electrically tunable quantum system that interacts strongly with light [8,17,18].…”

Section: Introductionmentioning

confidence: 99%

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Double Quantum Dot Floquet Gain Medium

et al. 2016

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“…Recently, several experiments have shown coherent manipulation of such spins for the purpose of spin-based quantum computation. [4][5][6][7][8][9][10] Enabled by advances in device technology, the number of quantum dots that can be accessed is quickly increasing from very few to many. 11,12 Up to date, all these quantum dots have been tuned by "hand."…”

mentioning

confidence: 99%

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

Baart

Eendebak

Reichl

et al. 2016

Applied Physics Letters

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We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

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Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Cornia

Demontis

Zannier

et al. 2023

Adv Funct Materials

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At the cutting‐edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot‐based devices, suitably configured to allow the precise and calibration‐free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source‐drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to ≈2000 A W−1, 0.04 and ≈10−16normalW/Hz${10^{ - 16}}{\rm{W}}/\sqrt {Hz} $, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III‐V nanowire heterostructures represent a novel class of calibration‐free and highly sensitive probes of microwave radiation, with nanometer‐scale spatial resolution, that may foster the development of novel high‐performance microwave circuitries.

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Semiconductor double quantum dot micromaser

Cited by 128 publications

References 39 publications

Double Quantum Dot Floquet Gain Medium

Double Quantum Dot Floquet Gain Medium

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

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