Semiconductor Doping

Abstract

The sections in this article are Formalism of Diffusion Realization of the Diffusion Processes Atomic Models of Diffusion Diffusion of Impurities The Role of Oxidation and Nitridation During Diffusion The Role of Substrate Orientation in Diffusion Diffusion in Polycrystalline and Amorphous Silicon Masking Properties of Oxides Dopant Diffusion in Silicides Stress and Diffusion Characterization of Doped Layers

In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition

“…4 Owing to its remarkable properties, HfB 2 has potential applications in microelectronics: it performs well as a diffusion barrier between copper and silicon 5 and it has been investigated as a contact metal and a gate electrode material for Si metal-oxide-semiconductor fieldeffect transistors. 6,7 In 1988, two groups independently discovered a highly attractive chemical vapor deposition route to HfB 2 thin films from the single-source precursor Hf͑BH 4 ͒ 4 . 8,9 We have recently shown that the kinetics of this chemical vapor deposition ͑CVD͒ process exhibits Langmuirian behavior, i.e., the reaction rate saturates at high precursor pressure.…”

Epitaxial growth of HfB2(0001) on Si(001) by etching through a SiO2 layer

“…Transition metal diborides are attractive candidates for many engineering applications owing to their attractive properties which include high melting temperature, high hardness and low electrical resistivity [1][2][3][4][5][6]. Zirconium diboride has been proposed as a substrate for the epitaxial overgrowth of GaN because the lattice constant and thermal expansion coefficient of ZrB 2 (0 0 0 1) match reasonably well with those of GaN(0 0 0 1) [7,8].…”