“…After five decades of research and development, only a few materials have had significant impact on hard radiation detection (Si, high purity Ge (HPGe), CdTe, Cd 1‐ x Zn x Te, and HgI 2 ) 3, 6–13. Generally, detection of hard radiation requires a strict combination of properties in a semiconductor crystal that need to be satisfied simultaneously: very high crystal purity, high average atomic number ( Z ) that increases the probability of an incoming radiation beam interacting with valence electrons, a large bandgap ( E g > 1.6 eV) to minimize dark current and electronic noise, and a high carrier mobility–carrier lifetime product, μτ , for rapid signal readout.…”