Semiconductor arrayed waveguide gratings for photonic integrated devices

Yoshikuni, Y.

doi:10.1109/jstqe.2002.805968

Cited by 47 publications

(23 citation statements)

References 31 publications

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“…On the other hand, this high confinement along with the separation of the waveguides on the input and output of the star coupler leads to excessive coupling loss when the mode passes from the star coupler to the phased array and vice versa (Yoshikuni 2002). Photolithography limits how close in proximity two waveguides can be located.…”

Section: Waveguide Designmentioning

confidence: 99%

Broadband arrayed waveguide gratings on InP

et al. 2007

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Broadband arrayed waveguide gratings on InP are presented using a novel S-shape design. This design was utilized to accommodate the large free spectral range required for broadband operation. Four and eight channel AWGs with a wavelength channel spacing of 18 nm are discussed. The output peaks of the AWGs have a wide FWHM of 11 nm which provides insensitive operation to polarization, temperature fluctuations, and chromatic dispersion.

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Section: Waveguide Designmentioning

confidence: 99%

Broadband arrayed waveguide gratings on InP

et al. 2007

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“…Monolithic integration of passive waveguide based devices with active elements such as gain sections has been demonstrated using various techniques using InP / InGaAsP based structures for both active and passive parts [4][5][6][7][8] . The unique properties of a-Si alloys outlined above provide significant opportunities and advantages for realizing low cost integrated photonic circuits by monolithically combining passive amorphous silicon waveguide based circuits with active III/V components 9 .…”

Section: Introductionmentioning

confidence: 99%

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

Chan¹,

Kharas²,

Maley³

et al. 2006

SPIE Proceedings

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Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multiwavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

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“…The 3 dB bandwidth of the commercialized flat-top AWGs can reach to 75% of the channel spacing by the technology of introducing MMI [12]. The current InP based AWG of Gaussian type spectral response, mainly used in monolithic PIC, is widely studied, the 3 dB bandwidth is only 50% of the channel spacing, the on-chip loss is around 3 dB and crosstalk level is around 30 dB [13,14]. However, InP based flat-top AWG is rarely reported.…”

mentioning

confidence: 99%