Semiconducting cubic boron nitride

Litvinov, Dmitri; Taylor, C. A.; Clarke, Roy

doi:10.1016/s0925-9635(97)00216-1

Cited by 90 publications

(29 citation statements)

References 14 publications

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“…There are, on the other hand, also studies reporting that considerable stress reduction can be achieved if after successful nucleation of c-BN the ion energy is reduced [17,58,59]. This result seems to contradict Eq.…”

Section: Measures Of Stress Reductionmentioning

confidence: 94%

Deposition of thick cubic boron nitride films — Mechanisms and concepts

Kulisch¹,

Freudenstein²

2007

Thin Solid Films

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Section: Measures Of Stress Reductionmentioning

confidence: 94%

Deposition of thick cubic boron nitride films — Mechanisms and concepts

Kulisch¹,

Freudenstein²

2007

Thin Solid Films

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“…2002 [72] /2014 [73] TBD ( cm −3 hole density) [74] Various ---500/TBD (Hall mobility) 1998 [75] /-3800/5300…”

Section: /171mentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

964

463

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“…This verifies the n-type conductivity of BN thin films. Litvinov et al 218 reported p-type conductivity of c-BN thin films grown on (100) Si substrate. The carrier activation energy of 60 meV and the Hall mobility of 500 cm 2 V 21 s 21 at carrier concentration of 5610 13 cm 23 were calculated.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

Samantaray¹,

Singh²

2005

International Materials Reviews

122

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Cubic boron nitride (c-BN) thin films are of significant interest because of their diamond like structure and properties. c-BN shows high thermal conductivity, chemical inertness against ferrous metals even at high temperatures, wide band gap, and good transmittance over a wide spectral range from UV to visible. Applications of c-BN include hard protective coatings for cutting tools, in optical instruments as UV detectors, as emitters, and in high temperature electronic devices. However, synthesis of phase pure c-BN thin films continues to be very challenging. The present study reviews the current status of the synthesis, characterisation, mechanical, electrical, and optical properties of c-BN thin films. Both physical and chemical vapour deposition methods used for the preparation of the c-BN films are covered. In addition, different nucleation and growth models of c-BN formation and growth on different substrates are described. The influence of process parameters such as ion energy, growth temperatures, chemical precursors, bias, and impurities on the nucleation and growth is reviewed. Mechanical properties including hardness, elastic modulus, and stiffness of c-BN films are discussed. The latest developments in electrical properties of the c-BN films based on metal-insulatorsemiconductor (MIS) hetero-structures, interface states, impurity states, conduction mechanism, field emission properties, and negative electron affinity (NEA) are presented. The optical properties and cathodoluminescence characteristics of BN films are also discussed.

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Semiconducting cubic boron nitride

Cited by 90 publications

References 14 publications

Deposition of thick cubic boron nitride films — Mechanisms and concepts

Deposition of thick cubic boron nitride films — Mechanisms and concepts

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

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